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Article Citation - WoS: 2Citation - Scopus: 2Properties of Tl4se3< Single Crystals and Characterization of Ag/Tl4< Schottky Barrier Diodes(Elsevier Science Bv, 2010) Qasrawi, A. F.; Gasanly, N. M.The main physical properties of Tl4Se3S single crystals were investigated for the first time. Particularly, the crystal data, Debye temperature, dark electrical resistivity and Hall effect in addition to the temperature dependent current-voltage characteristics and photosensitivity of the Ag/Tl4Se3S Schottky barrier diode were studied. The X-ray diffraction patterns have revealed that the crystal exhibited a single phase of tetragonal structure belonging to the D-4h(18) - 14mcm space group. A Debye temperature of 100 K was calculated using the results of the X-ray diffraction analysis. The dark electrical resistivity and Hall-effect measurements indicated that the samples exhibits p-type conduction with an electrical resistivity, carrier concentration and Hall mobility of 6.20 x 10(3) Omega cm, 1.16 x 10(12) cm(-3) and 873 cm(2) V-1 s(-1), respectively. The crystals were observed to have Schottky diode properties. The Ag/Tl4Se3S Schottky barrier device bias voltage was observed to depend on the crystal direction and on temperature. It was found that the calculated energy barrier height decreased and the diode ideality factor increased with temperature decreasing. The photosensitivity-light intensity dependence of this device was found to be linear reflecting the ability of using it in optoelectronics. (C) 2009 Elsevier B.V. All rights reserved.Article Citation - WoS: 4Citation - Scopus: 5Gd and Tb Doping Effects on the Physical Properties of Nd2sn2<(Elsevier Sci Ltd, 2018) Saleh, Adli A.; Hamamera, Hanan Z.; Khanfar, Hazem K.; Qasrawi, A. F.; Yumusak, G.In the current study, we report the light doping effects of the gadolinium and the terbium on the structural, morphological, optical and electrical properties of Nd2Sn2O7 pyrochlore ceramics. The pyrochlore which is prepared by the conventional solid state reaction technique is analyzed by means of scanning electron microscopy, energy dispersive X-ray analyzer, X-ray diffraction, ultraviolet- visible light spectrophotometry and temperature dependent current -voltage characteristics techniques. It is found that even though the doping content of both metals is low (2%), they significantly alter the physical properties of the pyrochlore. Particularly, it is observed that, these two doping agents increases the lattice parameter and strain and reduces the crystallite size and dislocation density. Optically, the effect of Gd doping on shrinking the energy band gap value of the Nd(2)Sn(2)O(7 )pyrochlore ceramic is more pronounced than that of Tb. On the other hand, the electrical investigations have shown that while the Gd make the pyrochlore exhibit p-type conductivity through forming shallow acceptor levels, the Tb forces n-type conductivity by forming deep donor levels below the conduction band edge. Such acceptor and donor impurity levels increases the electrical conductivity of the Nd(2)Sn(2)O(7 )pyrochlore ceramics by 390 and 58 times, respectively.
