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Article Citation - WoS: 9Citation - Scopus: 8Exploring the Optical Dynamics in the Ito/As2< Interfaces(Springer, 2019) Al Garni, S. E.; Qasrawi, A. F.In this work, the effects of indium tin oxide (ITO) substrates on the structural, compositional, optical dielectric and optical conduction properties of arsenic selenide thin films are investigated. The As2Se3 films which are prepared by the thermal deposition technique under vacuum pressure of 10(-5) mbar exhibit an induced crystallization process, improved stoichiometry, increased optical transmittance in the visible range of light and increased dielectric response in the infrared range of light upon replacement of glass substrates by ITO. The ITO/As2Se3 interfaces exhibit conduction and valence band offset values of 0.46 eV and 0.91 eV, respectively. The experimental optical conductivity spectra are theoretically reproduced with the help of the Drude-Lorentz approach for optical conduction. In accordance with this approach, owing to the improved crystallinity of the arsenic selenide, the deposition of As2Se3 onto ITO substrates increases the drift mobility value from similar to 17.6 cm(2)/Vs to 34.6 cm(2)/Vs. It also reduces the density of free carriers by one order of magnitude. The ITO/As2Se3/C heterojunction devices which are tested as band filters which may operate in the frequency domain of 0.01-3.0 GHz revealed low pass filter characteristics below 0.35 GHz and band pass filter characteristics in the remaining spectral range.Article Citation - WoS: 3Citation - Scopus: 3Characterization of As2se3< Heterojunction Designed for Multifunctional Operations(Iop Publishing Ltd, 2021) Qasrawi, A. F.; Kayed, T. S.In this article, As2Se3/MoO3 heterojunction devices are structurally, compositionally, optically and electrically characterized. The heterojunction devices which are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit amorphous nature of growth. The optical spectrophotometry measurements and analyses on the heterojunction devices revealed a conduction and valence band offsets of values of 2.64 and 4.08 eV, respectively. In addition, the dielectric dispersion and the optical conductivity parametric analyses have shown that the heterojunction could exhibit large drift mobility value up to 73.7 cm(2) V-1 s(-1). From electrical point of view, while the capacitance- voltage curves reveal characteristics of MOSFET devices, the current--voltage curves display tunneling diode characteristics. The features of the As2Se3/MoO3 devices including the band offsets, drift mobility, plasmon frequency, microwave band filtering and MOSFET characteristics make them attractive for use as thin films transistors suitable electrical and optical applications.
