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Article Citation - WoS: 3Citation - Scopus: 4Structural, Optical and Electrical Properties of Bi1.5zn0.92< Pyrochlore Ceramics(Univ Fed Sao Carlos, dept Engenharia Materials, 2021) Qasrawi, A. F.; Abdalghafour, Mays A.; Mergen, A.Herein, the structural, morphological, compositional, optical, electrical and dielectric properties of Bi1.5Zn0.92Nb1.5-6x/5WxO6.92 (BZN) solid solutions are reported. Tungsten substituted BZN ceramics which are fabricated by the solid state reaction technique exhibited solubility limits at substitution level below x=0.18. Remarkable engineering in the structural, optical, electrical and dielectric properties of the pyrochlore ceramics is achieved via W substitution. Namely, shrinkage in both of the lattice parameters and in the energy band gap accompanied with decrease in the microstrain, in the dielectric constant and in the electrical resistivity is observed upon increasing the W content below the solubility limit. The increase in the W content in the BZN ceramics enhances the densification of the pyrochlore and leads to higher light absorbability and larger crystallites growth. The temperature dependent electrical resistivity measurements has also shown that the pyrochlore exhibit thermal stability below 380 K.Article Citation - WoS: 26Citation - Scopus: 26Etectron-Phonon Short-Range Interactions Mobility and P- To N-Type Conversion in Tlgas2 Crystal(Wiley-v C H verlag Gmbh, 2006) Qasrawi, AF; Gasanly, NMThe conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0) and 0.23m(0), respectively. In addition, the temperature-dependent Hall mobility is found to decrease with temperature following a logarithmic slope of similar to 1.6. The Hall mobility in the n-region is limited by the electron-phonon short-range interactions scattering with an electron-phonon coupling constant of 0.21. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.Article Citation - WoS: 1Carrier Transport Properties of Ins Single Crystals(Wiley-blackwell, 2003) Qasrawi, AF; Gasanly, NMThe electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m(0), a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
