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Scopus Q: Q2Subject: Mos<sub>2</sub>

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    Citation - WoS: 25
    Citation - Scopus: 25
    Temperature-Tuned Band Gap Properties of Mos2 Thin Films
    (Elsevier, 2020) Surucu, O.; Isik, M.; Gasanly, N. M.; Terlemezoglu, M.; Parlak, M.
    MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. (C) 2020 Elsevier B.V. All rights reserved.
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    Citation - WoS: 39
    Citation - Scopus: 37
    MoS2-nanosheet/graphene-oxide composite hole injection layer in organic light-emitting diodes
    (Korean inst Metals Materials, 2017) Park, Minjoon; Thang Phan Nguyen; Choi, Kyoung Soon; Park, Jongee; Ozturk, Abdullah; Kim, Soo Young; Nguyen, Thang Phan
    In this work, composite layers comprising two-dimensional MoS2 and graphene oxide (GO) were employed as hole injection layers (HILs) in organic light-emitting diodes (OLEDs). MoS2 was fabricated by the butyllithium (BuLi) intercalation method, while GO was synthesized by a modified Hummers method. The X-ray diffraction patterns showed that the intensity of the MoS2 (002) peak at 14.15A degrees decreased with increase in GO content; the GO (001) peak was observed at 10.07A degrees. In the C 1s synchrotron radiation photoemission spectra, the contributions of the C-O, C=O, and O-C=O components increased with increase in GO content. These results indicated that GO was well mixed with MoS2. The lateral size of MoS2 spanned from a few hundreds of nanometers to 1 mu m, while the size of GO was between 400 nm and a few micrometers. Thus, the coverage of the MoS2-GO composite on the ITO surface improved as the GO content increased, owing to the large particle size of GO. Notably, GO with large size could fully cover the indium tin oxide film surface, thus, lowering the roughness. The highest maximum power efficiency (PEmax) was exhibited by the OLED with MoS2-GO 6:4 composite HIL, indicating that similar contents of MoS2 and GO in MoS2-GO composites provide the best results. The OLED with GO HIL showed very high PEmax (4.94 lm W-1) because of very high surface coverage and high work function of GO. These results indicate that the MoS2-GO composites can be used to fabricate HILs in OLEDs.