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Article Citation - WoS: 11Citation - Scopus: 11Design and Applications of Al/Inse Hybrid Device(Ieee-inst Electrical Electronics Engineers inc, 2015) Qasrawi, Atef F.; Khanfar, Hazem K.In this paper, a hybrid device made of Ag/BN Schottky barrier and anisotype InSe/BN heterojunction is designed and characterized. The design of the energy band diagram of the device revealed a valance band splitting at the InSe/BN interface and a barrier height at the Ag/BN junction of 3.04 and 6.49 eV, respectively. These parameters which were designed to force current conduction by tunneling were experimentally confirmed by the dark I-V characteristics which revealed an electric field assisted tunneling process. The hybrid device exhibited high/low current switching property at Vs = 2.60 V when forward biased. When the device was exposed to 850-nm lasers light, Vs regularly increased with increasing light power indicating the applicability of these devices as IR photodetectors. In addition, when it was used as capacitor and depleted with signal of frequency of 0.1 GHz and varying amplitude it showed good energy storing property with a quality factor of similar to 200. On the other hand, when the hybrid device was used as microwave resonator it behaves like bandstop filter that blocks signals of various notch frequencies in the range of 1.58-2.30 GHz. The features of the device are promising as they indicate the applicability of the Al/InSe/BN/Ag in communication technology.Article Citation - WoS: 2Citation - Scopus: 2Mgo/Gase0.5< Heterojunction as Photodiodes and Microwave Resonators(Ieee-inst Electrical Electronics Engineers inc, 2016) Qasrawi, Atef F.; Khanfar, Hazem K.; Gasanly, N. M.In this paper, a multifunctional operating optoelectronic device that suits visible light (VLC) and microwave communication systems is designed and characterized. The device which is composed of p-type MgO and n-type GaSe0.5S0.5 heterojunction is characterized by means of optical absorbance in the incident light energy (E) region of 3.5-1.1 eV, dark and illuminated current (I)-voltage (V) characteristics, and impedance spectra in the frequency range of 1M-1.8 GHz. Four types of lasers which generate light of wavelengths 406, 632, 850, and 1550 nm are used to excite the active region of the device. The device was also illuminated by non-monochromatic light. The incident light power was varied in the range of 1.12-10.17 mu W. It was observed that the heterojunction exhibits an optical energy bandgap (E-g) of 1.85 eV. For laser excitation with E > Eg, the photosensitivity (S) exceeds 67 while it is less than unity for excitations with E < Eg. These behaviors are assigned to the intrinsic and extrinsic nature of absorption, respectively. In addition, S increases as a result of energy barrier height lowering with increasing light power. On the other hand, when the device was excited with ac signal, the capacitance and impedance of the device displayed a resonance-antiresonance property associated with negative differential resistance and very high signal quality factor (10(3)) above 1.37 GHz. The bandwidth of the two resonance-antiresonance peaks is 319 and 12.6 MHz at 1.475 and 1.649 GHz, respectively. These results are attractive for using the heterojunction in VLC and microwave communication technologies.
