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Article Citation - WoS: 4Citation - Scopus: 4A Frequency Domain Boundary Element Formulation for Dynamic Interaction Problems in Poroviscoelastic Media(Springer, 2014) Argeso, Hakan; Mengi, YalcinA unified formulation is presented, based on the boundary element method, to perform the interaction analysis for the problems involving poroviscoelastic media. The proposed formulation permits the evaluation of all the elements of impedance and input motion matrices at a single step in terms of system matrices of boundary element method without solving any special problem, such as, unit displacement or load problem, as required by conventional methods. It further eliminates the complicated procedure and the need for using scattering analysis in the evaluation of input motion functions. The formulation is explained by considering a simple interaction problem involving an inclusion embedded in an infinite poroviscoelastic medium, which is under the influence of a dynamic excitation induced by seismic waves. In the formulation, an impedance relation is established for this interaction problem, suitable for performing the interaction analysis by substructure method, which permits carrying out the analysis for inclusion and its surrounding medium separately. The inclusion is first treated as poroviscoelastic, then viscoelastic and finally rigid, where the formulation in each of these cases is obtained consecutively as a special case of the previous one. It is remarkable to note that, a cavity problem where there is a hole in place of inclusion can be also considered within the framework of the present formulation. The formulation is assessed by applying it to some sample problems. The extension of the formulation to other types of interaction problems, such as, multi-inclusion problems, the analyses of foundations supported by a poroviscoelastic medium, etc., will be the subject of a separate study.Article Citation - WoS: 9Citation - Scopus: 9Design and Characterization of Au/In4< Field Effect Transistors(Elsevier Science Bv, 2018) Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal kappa-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 degrees C in a vacuum media. The coating of the kappa-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal-oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01-1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies. (C) 2018 The Authors. Published by Elsevier B.V.Article Citation - WoS: 26Citation - Scopus: 27Impact of Yb, In, Ag and Au Thin Film Substrates on the Crystalline Nature, Schottky Barrier Formation and Microwave Trapping Properties of Bi2o3< Films(Elsevier Sci Ltd, 2017) Khusayfan, Najla M.; Qasrawi, A. F.; Khanfar, Hazem K.The effect of the Yb, In, Ag and Au thin film metal substrates on the structural and electrical properties of Bi2O3 thin films are investigated by means of X-ray diffraction, impedance spectroscopy an current-voltage characteristic techniques. The Bi2O3 films are observed to exhibit a crystallization nature depending on the crystal structure of the substrate. Particularly, when the metal substrate is facing centered cubic, the Bi2O3 prefers the gamma-phase of body centered cubic crystallization for the (Yb, Ag and Au)/Bi2O3 interfaces. Whereas when a tetragonal substrate (indium) is used, the tetragonal beta-Bi2O3 single phase is preferred. All structural parameters presented by the lattice constant, degree of orientation, dislocation density, micro-strain and grain size are observed to strongly depend on the crystal type. In addition, the evaluation of the Schottky barrier formation at the (Yb, In, Ag, Au)/Bi2O3/Au interfaces by the current-voltage characteristics, revealed that the (In, Au)/Bi2O3/Au interface exhibit ohmic nature of contact and the (Yb,Ag)/Bi2O3/Au are of Schottky type, the rectification ratio for the Yb/Bi2O3/Au interface reaches a value of 10(5) indicating the applicability of these interfaces in CMOS digital logic devices. Moreover, the impedance spectroscopy analysis revealed that the ohmic interfaces exhibit a negative capacitance effect. The In/beta-Bi2O3/Au and Yb/.-Bi2O3/Au interfaces are performing as microwave traps with wave absorption percentage of 62% and 92% at frequencies of 193 and 1200 MHz, respectively. The features of the devices are promising as they indicate the applicability as microwave resonator and fast electronic switches.
