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Article Citation - WoS: 1Carrier Transport Properties of Ins Single Crystals(Wiley-blackwell, 2003) Qasrawi, AF; Gasanly, NMThe electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m(0), a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation - WoS: 9Citation - Scopus: 11Methodological Framework for the Allocation of Work Packages in Global Software Development(Wiley-blackwell, 2014) Ruano-Mayoral, Marcos; Casado-Lumbreras, Cristina; Garbarino-Alberti, Helena; Misra, SanjayGlobal software development in software development industry is a new aspect for many software project managers. In this scenario, the allocation of work packages among project participants is not a simple task. This allocation was traditionally determined by availability and competence but this new trend introduces complexity in an already complex process. Given the need to define new models to guide managers in these operations, this paper presents a framework to allocate work packages among project participants. Apart from the introduction of the framework itself, the results of its implementation are presented. These results show a notable output of the implementation in terms of accuracy of task execution to planning, effect introduction and overall satisfaction. Copyright (c) 2013 John Wiley & Sons, Ltd.Article Citation - WoS: 30Citation - Scopus: 34Preparation and Testing of Nafion/Titanium Dioxide Nanocomposite Membrane Electrode Assembly by Ultrasonic Coating Technique(Wiley-blackwell, 2014) Devrim, Yilser; Alemdaroğlu Temel, Mine; Alemdaroğlu Temel, MineMembrane electrode assemblies with Nafion/nanosize titanium dioxide (TiO2) composite membranes were manufactured with a novel ultrasonic-spray technique (UST) and tested in proton exchange membrane fuel cell (PEMFC). The structures of the membranes were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and thermogravimetric analysis. The composite membranes gained good thermal resistance with insertion of TiO2. The SEM and XRD techniques have proved the uniform and homogeneous distribution of TiO2 and the consequent enhancement of crystalline character of these membranes. The existence of nanometer size TiO2 has improved the thermal resistance, water uptake, and proton conductivity of composite membranes. Gas diffusion electrodes were fabricated by UST. Catalyst loading was 0.4 (mg Pt) cm(-2) for both anode and cathode sides. The membranes were tested in a single cell with a 5 cm(2) active area operating at the temperature range of 70 degrees C to 110 degrees C and in humidified under 50% relative humidity (RH) conditions. Single PEMFC tests performed at different operating temperatures indicated that Nafion/TiO2 composite membrane is more stable and also performed better than Nafion membranes. The results show that Nafion/TiO2 is a promising membrane material for possible use in PEMFC at higher temperature. (c) 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014, 131, 40541.Article Citation - WoS: 1Citation - Scopus: 1Hole-Polar Phonon Interaction Scattering Mobility in Chain Structured Tlse0.75s0.25< Crystals(Wiley-blackwell, 2009) Qasrawi, A. F.; Gasanly, N. M.In this study, the electrical resistivity, charge carriers density and Hall mobility of chain structured TlSe0.75S0.25 crystal have been measured and analyzed to establish the dominant scattering mechanism in crystal. The data analyses have shown that this crystal exhibits an extrinsic p-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of three energy levels located at 280 meV, 68 meV and 48 meV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The carrier concentration data were best reproduced assuming the existence of an acceptor impurity level being located at 68 meV consistent with that observed from resistivity measurement, The model allowed the determination of the hole effective mass and the acceptor-donor concentration difference as 0.44m(0) and 2.2 x 10(12) cm(-3), respectively. The Hall mobility of the TlSe0.75S0.25 crystal is found to be limited by the scattering of charged carriers over the (chain) boundaries and the scattering of hole-polar phonon interactions above and below 300 K, respectively. The value of the energy barrier height at the chain boundaries was found to be 261 meV. The polar phonon scattering mobility revealed the high-frequency and static dielectric constants of 13.6 and 15.0, respectively. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimArticle Citation - WoS: 3Citation - Scopus: 3Transport and Recombination Kinetics in Tlgate2 Crystals(Wiley-blackwell, 2009) Qasrawi, A. F.; Gasanly, N. M.In this work, the transport and recombination mechanisms as well as the average hole-relaxation time in TlGaTe2 have been investigated by means of temperature-dependent dark electrical conductivity, photoexcitation intensity-dependent photoconductivity, and Hall effect measurements, respectively. The experimental data analysis revealed the existence of a critical temperature of 150 K. At this temperature, the transport mechanism is disturbed. The dark conductivity data analysis allowed the determination of an energy state of 258 meV The hole-relaxation time that was determined from the Hall mobility data was observed to increase with decreasing temperature. The behavior was attributed to the hole-thermal lattice scattering interactions. At fixed photoexcitation intensity, the photocurrent I-ph decreases with decreasing temperature down to 150 K. Below this temperature it changes direction. The latter data allowed the determination of the recombination center energy as 1 10 meV On the other hand, at fixed temperature and variable illumination intensity, the photocurrent follows the relation I-ph alpha F-n (the value of the exponent, it, decreases with decreasing temperature). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimArticle Citation - WoS: 3Citation - Scopus: 8Assessing Software Quality Using the Markov Decision Processes(Wiley-blackwell, 2014) Korkmaz, Omer; Akman, Ibrahim; Ostrovska, SofiyaQuality of software is one of the most critical concerns in software system development, and many products fail to meet the quality objectives when constructed initially. Software quality is highly affected by the development process's actual dynamics. This article proposes the use of the Markov decision process (MDP) for the assessment of software quality because MDP is a useful technique to abstract the model of dynamics of the development process and to test its impact on quality. Additionally, the MDP modeling of the dynamics leads to early prediction of the quality, from the design phases all the way through the different stages of development. The proposed approach is based on the stochastic nature of the software development process, including project architecture, construction strategy of Software Quality Assurance system, its qualification actions, and team assignment strategy. It accepts these factors as inputs, generating a relative quality degree as an output. The proposed approach has been demonstrated for the design phase with a case study taken from the literature. The results prove its robustness and capability to identify appropriate policies in terms of quality, cost, and time. (c) 2011 Wiley Periodicals, Inc.Article Citation - WoS: 3Citation - Scopus: 3Characterization of Ag/Tlinse2< Structure(Wiley-blackwell, 2011) Qasrawi, A. F.; Gasanly, N. M.In this work, the current voltage characteristics of Ag/TlInSe2/Ag and In/TlInSe2/In structures, the incident light intensity and time dependencies of photocurrent as well as the response time-illumination intensity dependence of Ag/TlInSe2/Ag structures have been studied. For bias voltages larger than 1200. and 4.0 V, the current injection was found to be space charge limited and was assigned to the existing of deep and shallow hole traps being located at 210 and 16 meV for Ag and In-contacted samples, respectively. While indium-contacted samples show S-shaped I-V dependence above bias voltage of 10.0V, silver contacted samples does not show this behavior even at 200.0 V. For the Ag/TlInSe2/Ag structure, photocurrent was observed to exhibit stable values in a very short period of time. The device response time decreases with increasing illumination intensity, it exhibits a value of 0.13 s at incident light intensity of 53.6 mW cm(-2). The decrement in response time with increasing illumination intensity is associated with an increment in photocurrent at the same ratio. The ohmic behavior up to high voltages (120 V), the fast response time and the large spatial photocurrent make the Ag/TlInSe2/Ag structure promising IR detectors. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimArticle Citation - WoS: 50Citation - Scopus: 51Elemental Sulfur-Based Polymeric Materials: Synthesis and Characterization(Wiley-blackwell, 2016) Salman, Mohamed Khalifa; Karabay, Baris; Karabay, Lutfiye Canan; Cihaner, AtillaNew elemental sulfur-based polymeric materials called poly(sulfur-random-divinylbenzene) [poly(S-r-DVB)] were synthesized by ring opening polymerization via inverse vulcanization technique in the presence of a mixture of o-, m-, and p-diviniylbenzene (DVB) as a cross-linker. A clear yellow/orange colored liquid was obtained from the elemental sulfur melted at 160 degrees C and then by adding various amounts of DVB to this liquid directly via a syringe at 200 degrees C viscous reddish brown polymeric materials were obtained. The copolymers are soluble in common solvents like tetrahydrofuran, dichloromethane, and chloroform, and they can be coated on any surface as a thin film by a spray coating technique. The characterization of the materials was performed by using nuclear magnetic resonance, fourier transform infrared, and Raman spectroscopies. The morphological properties were monitored via scanning electron microscope technique. Thermal analysis showed that an increase in the amount of DVB in the copolymers resulted in an increase in the thermal decomposition temperature. On the other hand, poly(S-r-DVB) copolymers exhibited good percent transmittance as 50% T between 1500 and 13,000 nm in electromagnetic radiation spectrum, which makes them good candidates to be amenable use in military and surveillance cameras. (c) 2016 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2016, 133, 43655.
