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Article Citation - WoS: 10Citation - Scopus: 9Tunable Au/Ga2< Varactor Diodes Designed for High Frequency Applications(Natl inst R&d Materials Physics, 2017) Al Garni, S. E.; Qasrawi, A. F.; Department of Electrical & Electronics EngineeringIn this work, the design and characterization of Au/Ga2S3/Yb Schottky barrier is investigated by means of transmittance electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDXS), capacitance spectroscopy, capacitance (C)-voltage (V) characteristics and impedance spectroscopy techniques. The design of the energy band diagram of the amorphous Au/Ga2S3 interface revealed a theoretical energy barrier height (q phi(b)) and built in voltage (qV(bi)) of 2.04 and 1.88 eV, respectively. Experimentally, the qV(bi) was observed to be sensitive to the applied signal frequency. In addition, the capacitance spectra which were studied in the range of 10-1800 MHz, revealed resonance and antiresonance biasing dependent signal oscillations associated with negative capacitance values. On the other hand, impedance spectroscopy analysis revealed band pass/reject filtering properties in all the studied frequency range. The device exhibited a return loss, voltage standing wave ratio and power efficiency of 16.7 dB, 1.3 and 98.3% at 1400 MHz, respectively.Article Citation - WoS: 5Citation - Scopus: 5Formation and Negative Capacitance Effect in Au/Bi2< Heterojunctions Designed as Microwave Resonators(Natl inst R&d Materials Physics, 2018) Al Garni, S. E.; Qasrawi, A. F.; Department of Electrical & Electronics EngineeringIn this article, the physical design, energy band diagram, temperature dependent electrical resistivity and the impedance spectroscopy measurements of the Au/Bi2O3/ZnS/Ag isotype heterojunction devices are reported. The devices are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar. Structural, compositional and morphological studies has shown the presence of an expansion in the lattice of Bi2O3 associated with increased strain and dislocation density and decreased grain size as a result of ZnS interfacing. The design of the band diagram indicated that the formed heterojunction exhibit large valence and conduction band offsets that forces charge accumulation at the interface. The Au/Bi2O3/ZnS/Ag device displays negative capacitance (NC) effect in the frequency domain of 0.01-1.50 GHz. The NC effect is interrupted by a resonance-antiresonance phenomenon in the frequency domain of 0.90-1.07 GHz. In addition to the NC effects, the device under study exhibited reflection coefficient and return loss spectra that nominate it for use as microwave cavities or as low pass band filters.
