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  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Investigation of Defect Levels in Bi12sio20< Single Crystals by Thermally Stimulated Current Measurements
    (Iop Publishing Ltd, 2021) Isik, M.; Delice, S.; Gasanly, N. M.
    Bi12SiO20 (BSO) single crystal belongs to the sillenite semiconducting family known as defective compounds. The present paper investigates the defect centers in BSO grown by Czochralski method by means of thermally stimulated current (TSC) measurements performed in the 10-260 K range. The TSC glow curve obtained at heating rate of beta = 0.1 K s(-1) presented several peaks associated with intrinsic defect centers. The activation energies of defect centers were revealed as 0.09, 0.15, 0.18, 0.22, 0.34, 0.70 and 0.82 eV accomplishing the curve fit analyses method. The peak maximum temperatures and orders of kinetics of each deconvoluted peak were also determined as an outcome of fitting process. TSC experiments were expanded by making the measurements at various heating rates between 0.1 and 0.3 K s(-1) to get information about the heating rate dependent peak parameters.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Thermoluminescence Dose Response and Kinetic Parameters of Gd-Doped Zno Nanoparticles
    (Iop Publishing Ltd, 2024) Isik, M.; Yildirim, T.; Guner, M.; Gasanly, N. M.
    This study investigates the thermoluminescence (TL) properties of undoped and gadolinium (Gd)-doped zinc oxide (ZnO) nanoparticles synthesized via sol-gel method. The crystal structure of both synthesized nanoparticles was determined as hexagonal from x-ray diffraction pattern. The TL curve of undoped ZnO nanoparticles reveals two distinct peaks at 400.5 and 479.2 K, each associated with trap centers featuring activation energies of 0.84 and 1.05 eV. TL curve of the Gd:ZnO introduced three peaks associated with trap centers at 1.10, 1.18, and 1.25 eV. Notably, the absence of the 0.84 eV trap center in Gd-doped ZnO implies a modification in the defect structure. Considering the effect of Gd-doping on the band structure and potential minor errors in the analysis results, it was stated that the traps at 1.05 and 1.10 eV levels belonged to the same defect center. Dose-dependent investigations for undoped and Gd-doped ZnO nanoparticles reveal linear behaviors in the TL response, highlighting their potential for dosimetric applications. Photoluminescence spectra of both compounds exhibited emission peaks around 455 and 577 nm, which were associated with native defect centers.