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Article Citation - WoS: 21Citation - Scopus: 20Nonlinear Optical Absorption Characteristics of Pbmoo4 Single Crystal for Optical Limiter Applications(Elsevier, 2022) Pepe, Yasemin; Isik, Mehmet; Karatay, Ahmet; Gasanly, Nizami; Elmali, AyhanMolybdate materials take great interest due to their photocatalytic and optoelectronic applications. In this report, PbMoO4 single crystal, one of the member of molybdate materials, is grown by Czochralski technique and the change of nonlinear absorption characteristic depending on the input intensity was reported. Linear absorption analysis revealed the band gap energy and Urbach energy as to be 3.12 and 0.52 eV, respectively. Nonlinear absorption characteristics of the PbMoO4 single crystal was examined with the open aperture (OA) Z-scan experiments at 532 nm excitation wavelength under various input intensities. Fitting results of the OA Z-scan experiments indicated that PbMoO4 single crystal has nonlinear absorption (NA) behavior, and NA coefficient (beta(eff)) increased from 7.11 x 10(-8) to 1.96 x 10(-7) m/W with increasing input intensity. This observation was associated with the increase of the contribution of the free carrier absorption to the NA with the generation of more excited electrons with increasing input intensity. At the 532 nm excitation wavelength (2.32 eV), the dominant mechanisms were revealed as one photon and free carrier absorptions. The optical limiting threshold of the PbMoO4 single crystal was obtained to be 4.91 mJ/cm(2). The reported results indicated that PbMoO4 single crystal can be a good optical limiter in the visible wavelength region due to its effective NA behavior.Article Citation - WoS: 25Citation - Scopus: 25Temperature-Tuned Band Gap Properties of Mos2 Thin Films(Elsevier, 2020) Surucu, O.; Isik, M.; Gasanly, N. M.; Terlemezoglu, M.; Parlak, M.MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. (C) 2020 Elsevier B.V. All rights reserved.
