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Article Citation - WoS: 46Citation - Scopus: 49Recrystallization and Grain Growth Kinetics of In718 Manufactured by Laser Powder Bed Fusion(Elsevier, 2022) Dogu, Merve Nur; Davut, Kemal; Obeidi, Muhannad Ahmed; Yalcin, Mustafa Alp; Gu, Hengfeng; Low, Thaddeus Song En; Brabazon, DermotThe recrystallization and grain growth behaviour of IN718 alloy additively manufactured by laser powder bed fusion (L-PBF) is presented herein. The effects of three different temperatures (1050, 1150 and 1250 degrees C) and holding times (15, 45 and 90 min) were investigated. The texture evolution of the samples was recorded via electron backscatter diffraction (EBSD). The as-built sample is composed of bowl-shaped melt pools, a chessboard-like grain pattern and has a cube texture {100}<001>. Recrystallized grains were observed in the samples treated at 1150 degrees C for 15 min, as well as the samples treated for longer periods and at higher temperatures. Recrystallization was observed to start from high dislocation density regions, including the overlapping melt pools and the borders of the chessboard-like pattern. The initial cube texture transforms into a first-generation cube-twin texture {122}<212> via a twinning-assisted recrystallization mechanism. Then, those recrystallization nuclei sweep through the high defect density matrix; during which almost no new twins are formed. The samples treated at 1250 degrees C are almost completely recrystallized, which forms a weaker cube texture and a stronger P-orientation {011}<112>. However, the growth of recrystallized grains is very limited due to the presence of non-coherent precipitates. (C) 2022 The Author(s). Published by Elsevier B.V.Article Citation - WoS: 7Citation - Scopus: 6Temperature-Dependent Structural Transition, Electronic Properties and Impedance Spectroscopy Analysis of Tl2ingas4< Crystals Grown by the Bridgman Method(Elsevier Sci Ltd, 2018) Qasrawi, A. F.; Alkarem, Qotaibah A.; Gasanly, N. M.In this work, we report the temporary structural modifications associated with the in situ heating of the Tl2InGaS4 crystals in the temperature range of 300-420 K. The analysis of the X-ray diffraction patterns revealed the temperature-independent possible phase transformations between the monoclinic and triclinic phases. The temperature analysis of the lattice parameters, crystallite size, strain, dislocation density and stacking faults has shown a temporary enhancement in the crystallinity of this compound above 375 K. Significant increase in the grain size accompanied to decrease in the strain, defect density and stacking faults was observed above this temperature. The scanning electron microscopy imaging has shown that the crystals are layer structured with high quality layers of thicknesses of similar to 12 nm. In addition the energy dispersive X-ray analysis has shown that the crystal comprise no detectable impurity. Moreover, the room temperature optical characterizations has shown that the Tl2InGaS4 exhibit an energy band gap of 2.5 eV. The temperature dependent electrical resistivity measurements indicated highly resistive crystal with activation energy values of 0.84 and 0.19 eV above and below 375 K, respectively. On the other hand, room temperature impedance spectroscopy analysis in the frequency domain of 10-1800 MHz has shown that the crystal exhibits negative resistance and negative capacitance effects below and above 1580 MHz. The crystals are observed also to behave as band stop filter with notch frequency of 1711 MHz.
