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Now showing 1 - 10 of 117
  • Article
    Citation - WoS: 4
    Citation - Scopus: 3
    The Euler-Lagrange Theory for Schur's Algorithm: Wall Pairs
    (Academic Press inc Elsevier Science, 2006) Khrushchev, S
    This paper develops a techniques of Wall pairs for the study of periodic exposed quadratic irrationalities in the unit ball of the Hardy algebra. (C) 2005 Elsevier Inc. All rights reserved.
  • Article
    Citation - WoS: 14
    Citation - Scopus: 15
    Yielding of Two-Layer Shrink-Fitted Composite Tubes Subject To Radial Pressure
    (Springer Heidelberg, 2005) Eraslan, AN; Akis, T
    Yielding of two-layer shrink-fitted composite tubes with axially constrained ends subject to either internal or external pressure is investigated in detail. In the framework of small deformations, a state of plane strain and von Mises yield criterion, analytical expressions are obtained for critical values of the pressure leading to plastic flow. It is shown that, depending on material properties and tube dimensions, different modes of plastic deformation may occur. Yielding may commence at the inner tube or at the outer tube or simultaneously in both tubes. The conditions for different nature of plastic flow are determined. Using analytical expressions obtained for critical values of the parameters and properties of real engineering materials, various numerical examples are handled and the variation of elastic limit pressure with interference and interface radius is explained.
  • Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals
    (Taylor & Francis Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8-7.7) x 10(10) cm(3). Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.
  • Article
    Citation - WoS: 24
    Citation - Scopus: 24
    Symplectic and multisymplectic Lobatto methods for the "good" Boussinesq equation
    (Amer inst Physics, 2008) Aydin, A.; Karasoezen, B.
    In this paper, we construct second order symplectic and multisymplectic integrators for the "good" Boussineq equation using the two-stage Lobatto IIIA-IIIB partitioned Runge-Kutta method, which yield an explicit scheme and is equivalent to the classical central difference approximation to the second order spatial derivative. Numerical dispersion properties and the stability of both integrators are investigated. Numerical results for different solitary wave solutions confirm the excellent long time behavior of symplectic and multisymplectic integrators by preservink local and global energy and momentum. (C) 2008 American Institute of Physics.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Photoelectronic and Electrical Properties of Tl2ingas4< Layered Crystals
    (Pergamon-elsevier Science Ltd, 2007) Qasrawi, A. F.; Gasanly, N. M.
    Tl2InGaS4 layered crystals are studied through the dark electrical conductivity, space charge limited current and illumination- and temperature-dependent photoconductivity measurements in the temperature regions of 220-350 K, 300-400 K and 200-350 K, respectively. The space charge limited current measurements revealed the existence of a single discrete trapping level located at 0.44 eV. The dark electrical conductivity showed the existence of two energy levels of 0.32 eV and 0.60 eV being dominant above and below 300 K, respectively. The photoconductivity measurements reflected the existence of two other energy levels located at 0.28 eV and 0.19 eV at high and low temperatures, respectively. The photocurrent is observed to increase with increasing temperature up to a maximum temperature of 330 K. The illumination dependence of photoconductivity is found to exhibit supralinear recombination in all the studied temperature ranges. The change in recombination mechanism is attributed to exchange in the behavior of sensitizing and recombination centers. (C) 2006 Elsevier Ltd. All rights reserved.
  • Article
    Citation - WoS: 7
    Citation - Scopus: 10
    Efficient Software Review Process for Small and Medium Enterprises
    (inst Engineering Technology-iet, 2007) Mishra, D.; Mishra, A.
    A considerable amount of software is produced world-wide by small and medium enterprises (SMEs). These organisations do not have enough resources to implement a rigorous quality plan. It has been established that reviews of various artifacts play a very important role in ensuring the quality of software. Traditional review methods are rigorous and their implementation is cumbersome for SMEs. A new review process which is easy to implement and requires almost no documentation is introduced. It is based on reviewers' efforts to produce high-quality software while minimising the inspection cost. Additionally, people who are conducting this review need not be present at the same place during most phases of the review process. This process has been successfully implemented in a CMM level 3 software development company intending to achieve CMMI level 5 and results are found to be quite encouraging.
  • Article
    Citation - WoS: 5
    Citation - Scopus: 6
    Synthesis, X-Ray Data, and Hall Effect Measurements of Li-Doped Tl-Ba Superconductor
    (Wiley-v C H verlag Gmbh, 2003) Kayed, TS
    Lithium-doped Tl-based superconductor was prepared by adding an amount of 0.3 mol.% to the Tl1.8Ba2Ca2.2Cu3Ox compound. The usual solid-state reaction method has been applied under optimum conditions. The x-ray data of the sample show a tetragonal structure with a high ratio of Tl-2223 superconducting phase. The sample showed a transition at 125 K and the zero resistance was observed at 117 K. Longitudinal (transport) and transverse (Hall) resistivities were measured at different temperatures under different magnetic fields and the data were interpreted. A positive Hall coefficient was observed at normal state and a sign reversal appears at temperatures lower than the critical temperature. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Article
    Citation - WoS: 28
    Citation - Scopus: 30
    A Piezoelectric Micromotor With a Stator of φ=1.6 Mm and l=4 Mm Using Bulk Pzt
    (inst Pure Applied Physics, 2004) Cagatay, S; Koc, B; Moses, P; Uchino, K
    The smallest discrete piezoelectric ultrasonic motor using bulk ceramics was developed. We are proposing basically a two-part motor: stator and rotor. The stator of the present motor consists of a hollow metal brass tube with outer diameter of 1.6 mm, inner diameter of 0.8 mm and length of only 4 mm with 2 PZT plates bonded onto it. Owing to the asymmetrical stator surface, two degenerated orthogonal bending modes were slightly split, resulting in a wobbling motion. Thus, the motor can be driven by a single driving source. The rotor is a spring, which is basically different from previous designs, pressed at both ends to the stator by a pair of ferrules. Consequently, the length of the whole motor assembly was reduced significantly; a final motor length cf only 5 mm was obtained. The working frequency under zero load was approximately 227-233 kHz. Although the size is small, relatively high power was obtained under an optimized load condition: torque of 0.06mNm, maximum power of 3.2 mW with a speed of 118 rad/s, and maximum efficiency of 11% under 48 Vrms at 221 kHz.
  • Article
    Citation - WoS: 9
    Citation - Scopus: 9
    Electrical Properties of Bi1.5znsb1.5< Pyrochlore Ceramics
    (Wiley-v C H verlag Gmbh, 2003) Kayed, TS; Mergen, A
    Bi1.5ZnSb1.5O7 pyrochlore samples were prepared by solid state reaction method. They were examined by x-ray diffraction and scanning electron microscopy. Single phase, belongs to the cubic pyrochlore structure, with a lattice parameter of 10.442 Angstrom and grain size that varies from 16 to 20 mum was obtained. The electrical properties were measured at different temperatures in the range 15-330 K under different applied magnetic fields up 1.4 T. In our measurements for Hall coefficient, Hall resistivity, and mobility; we noticed an anomalous behavior at two temperatures (around 250 and 310 K) which was supported by the I-V measurements (double transition of the slope of I-V characteristics (beta) at the same temperatures). This was discussed in terms of polarization phenomenon and mixed ionic-electronic conduction. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Article
    Citation - WoS: 20
    Citation - Scopus: 22
    Electrochemical and Optical Properties of an Azo Dye Based Conducting Copolymer
    (Tubitak Scientific & Technological Research Council Turkey, 2009) Cihaner, Atilla; Algi, Fatih
    The electrochemical and optical properties of a novel conducting copolymer called poly(2,5'-dimethyl-[4-(2,5-di-thiophen-2-yl-pyrrol-1-yl)-phenyl]azobenzene-co-(3,4-ethylenedioxythiophene)) (poly(1-co-EDOT)) are reported. Electrochemically synthesized poly(1-co-EDOT) based on the azo dye has a well-defined and reversible redox couple (0.37 V vs. Ag/AgCl) with good cycle stability. The copolymer film exhibits high conductivity (13 S/cm) as well as electrochromic behavior (magenta when neutralized and transmissive sky blue when oxidized). Furthermore, electro-optically active copolymer film has a low band gap of 1.79 eV with a pi-pi* transition at 555 nm.