2 results
Search Results
Now showing 1 - 2 of 2
Conference Object Citation - WoS: 10Citation - Scopus: 10Investigation of Carrier Transport Mechanisms in the Cu-Zn Based Hetero-Structure Grown by Sputtering Technique(Canadian Science Publishing, 2018) Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M.In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.Article Citation - WoS: 2Citation - Scopus: 2Performance Enhancement of Silicon Photodiodes Through the Integration of Green Synthesized Reduced Graphene Oxide Variants(Iop Publishing Ltd, 2024) Yildiz, D. E.; Sürücü, Özge; Surucu, O.; Balaban, H. Mert; Bilici, I; Yildirim, M.; Sürücü, Özge; Electrical-Electronics Engineering; Electrical-Electronics EngineeringThis study examines the potential of enhancing the optoelectronic properties of silicon photodiodes by producing and analyzing heterostructures that incorporate reduced graphene oxide (rGO) synthesized with silicon using different reduction methods. Graphene oxide (GO) was manufactured utilizing an enhanced Hummers' method. Subsequently, reduced graphene oxides (rGOs) were made by chemical and thermal reduction processes, which are considered ecologically friendly. The use of ascorbic acid to produce ascorbic acid-reduced graphene oxide (ArGO) and thermal processing to produce thermally reduced graphene oxide (TrGO) have significantly contributed to the development of high-performance photodiode technology. The electrical properties were carefully assessed under different levels of light, revealing the substantial impact of integrating reduced graphene oxides (rGOs) on the performance of the diodes. Comparing ArGO/Si, TrGO/Si, and GO/Si heterostructures shows that customized rGO has the potential to greatly influence the responsivity and efficiency of Si-based optoelectronic devices, making a significant contribution to photodiode technology.
