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Article Citation - WoS: 11Citation - Scopus: 13Optical and Structural Characteristics of Electrodeposited Cd1-xznx< Nanostructured Thin Films(Elsevier, 2021) Erturk, K.; Isik, M.; Terlemezoglu, M.; Gasanly, N. M.The structural and optical characteristics of Cd1-xZnxS (CdZnS) thin films grown by the electrodeposition method were investigated in the present paper. The crystalline structure of the grown CdZnS thin film was determined as cubic wurtzite due to observed diffraction peaks associated with (111) and (220) planes. Atomic compositional ratios of the constituent elements were obtained using energy dispersive spectroscopy and doping concentration of the Zn was found as 5% (x similar to 0.05). Scanning electron microscopy image of the studied thin film indicated that grown film is nanostructured. Raman spectra of CdS and CdZnS thin films were measured and it was seen that observed longitudinal optical modes for CdZnS present a blue-shift. Temperature-dependent band gap energy characteristics of the thin films were studied performing transmission experiments in the 10-300 K temperature range. The analyses of the recorded transmittance spectra showed that direct band gap energy of the films decreases from 2.56 eV (10 K) to 2.51 eV (300 K) with the increase of temperature. The band gap energy vs. temperature dependency was studied applying well-known Varshni optical model and various optical parameters of the films were reported according to the results of the applied model.Article Citation - WoS: 9Citation - Scopus: 9Temperature Effects on Optical Characteristics of Thermally Evaporated Cusbse2 Thin Films for Solar Cell Applications(Elsevier, 2022) Surucu, O.; Isik, M.; Terlemezoglu, M.; Bektas, T.; Gasanly, N. M.; Parlak, M.CuSbSe2 thin film was deposited by co-evaporation of binary CuSe and Sb2Se3 sources. The structural and morphological properties of the deposited thin film were investigated with X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray analysis measurements. XRD pattern indicated that deposited thin film has an orthorhombic crystalline structure with the preferential orientation of (013) direction. SEM image presented that the thin film surface is almost uniform. The optical characteristics of the deposited CuSbSe2 thin film were investigated in detail by performing room temperature Raman, temperature-dependent transmittance spectroscopy, and photoluminescence techniques. Raman spectrum exhibited one mode at around 210 cm(-1) associated with A(g) vibrational mode. The derivative spectroscopy technique was used to obtain the band gap energy of the films. Temperature dependence of band gap energy was investigated by considering the Varshni model. The rate of change of band gap energy, absolute zero value of gap energy, and Debye temperature were determined as 1.3 x 10(-4) eV/K, 1.21 eV, and 297 +/- 51 K, respectively. The photoluminescence spectrum indicated the room temperature direct band gap energy as 1.30 eV.
