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Article Citation - WoS: 19Citation - Scopus: 19A Study on the Dark and Illuminated Operation of Al/Si3< Schottky Photodiodes: Optoelectronic Insights(Springer Heidelberg, 2024) Surucu, Ozge; Yildiz, Dilber Esra; Yildirim, MuratThis work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal-organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current-voltage (I-V), current-time (I-t), capacitance-time (C-t), and conductance time (G-t). The photodiode's rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R-s) and shunt resistance (R-sh). R-s values are calculated using Cheung's functions, revealing the diode's resistance behavior. The study also examines the photodiode's photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device's light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode's behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.Article Citation - WoS: 4Citation - Scopus: 4Physical Characterization of Thermally Evaporated Sn-Sb Thin Films for Solar Cell Applications(Springer Heidelberg, 2023) Bektas, Tunc; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, MehmetThe substitution of Sb in binary SnSe structure may lead to tailoring the physical properties of both SnSe and SbSe, promising absorber layers for thin film solar cells. The resulting Sn-Sb-Se structure could be an outstanding material for photovoltaic applications. In this study, Sn-Sb-Se thin films were deposited by thermal evaporation, and the effect of annealing on the films' structural, optical, and electrical properties were reported. XRD measurement shows that annealing at 300 degrees C yields the best crystalline quality, and structural parameters were calculated using XRD data. SEM and AFM measurements indicate deformation in the film surface after annealing at 400 degrees C. UV-Vis spectroscopy measurement provides a high absorption coefficient which indicates a direct band gap. The band gap and activation energies of the as-grown sample were found as 1.59 eV and 106.1 meV, respectively. The results of SEM, AFM, XRD, Raman, UV-Vis spectroscopy and temperature-dependent photoconductivity measurements were discussed throughout the paper.
