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Article Citation - WoS: 28Citation - Scopus: 10Electrical Conductivity and Hall Mobility in P-Type Tlgase2 Crystals(Pergamon-elsevier Science Ltd, 2004) Qasrawi, AF; Qasrawı, Atef Fayez Hasan; Gasanly, NM; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringSystematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.Article Citation - WoS: 42Citation - Scopus: 41Synthesis and Characterization of Mg2b2<(Pergamon-elsevier Science Ltd, 2005) Qasrawi, AF; Kayed, TS; Mergen, A; Gürü, MMagnesium borate of the form Mg2B2O5 has been prepared and its structural and thermal properties were studied using X-ray diffraction and differential thermal analysis. An investigation of the electrical and optical properties of Mg2B2O5 system has been carried out. The electrical resistivity of the sample was measured in the temperature range of 170-400 K. The data analysis revealed an extrinsic nature of the conductivity with two impurity levels located at 0.13 and 0.71 eV in the temperature ranges of 170-230 K and 240-400 K, respectively. The optical transmission and reflection was recorded at 300 K in the incident photon energy range of 3.0-6.0 eV. The absorption coefficient data analysis revealed an indirect optical energy band gap of 4.73 eV. In addition, two impurity levels located at 3.43, and 4.49 eV were observed in the absorption spectra. (c) 2005 Elsevier Ltd. All rights reserved.
