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Article Citation - WoS: 4Citation - Scopus: 4Exploring the Thermal Stability of Sb2se3 for Potential Applications Through Advanced Thermal Analysis Methods(Amer Chemical Soc, 2025) Altuntas, Gozde; Isik, Mehmet; Surucu, Gokhan; Parlak, Mehmet; Surucu, OzgeAntimony selenide (Sb2Se3) is a promising material for energy applications, including photovoltaics, thermoelectrics, and photodetectors, due to its favorable electronic properties, availability, and low toxicity. However, its thermal stability, crucial for device efficiency and reliability, has been less explored, leaving a gap in understanding its high-temperature suitability. This study evaluates the thermal stability of Sb2Se3 using thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC). The results show that Sb2Se3 remains stable up to 500 degrees C, with two significant weight loss stages: 1.75% between 500 and 610 degrees C, and 3.50% between 610 and 775 degrees C, indicating decomposition processes. Activation energies for the decomposition phases were determined as 121.8 and 57.2 kJ/mol using the Coats-Redfern method. Additionally, an endothermic phase transition was observed between 599 and 630.6 degrees C via DSC analysis. These findings demonstrate Sb2Se3's potential for high-temperature energy applications, providing essential insights for optimizing its use in solar cells, thermoelectric devices, and other technologies.Article Citation - WoS: 1Citation - Scopus: 1Nanowire Geometry Effects on Devices and Transport Mechanisms: Sns2 Heterojunction(Springer, 2023) Coskun, Emre; Emir, Cansu; Terlemezoglu, Makbule; Parlak, MehmetThe semiconductor nanowire technology has become essential in developing more complex and efficient devices. In this study, the Si nanowire (SiNW) heterojunction structure with a two-dimensional SnS2 thin film was investigated. The SiNW array was created by the metal-assisted etching method because of length control and production over large areas of nanowires. The created SiNW has more diminishing reflectivity compared with Si planar substrate. The diode characteristics of SnS2/SiNW and SnS2/Si planar heterojunctions were investigated by dark current analysis at room temperature, and the improving diode characteristics by the three-dimensional interface between SiNW and SnS2 thin film were discussed. Transport mechanisms of the SiNW heterojunction were also studied for various methods. Thermionic emission and thermally assisted tunneling models are the dominant mechanisms for low voltages (0.02-0.20 V), and the space charge limiting current mechanism dominates the current for comparingly high voltages (0.20-0.40 V). All the values reveal the significant impact of the SiNW on heterojunctions for improving efficiency.Article Citation - WoS: 28Citation - Scopus: 29Structural, Morphological and Temperature-Tuned Bandgap Characteristics of Cus Nano-Flake Thin Films(Elsevier, 2022) Isik, Mehmet; Terlemezoglu, Makbule; Gasanly, Nizami; Parlak, MehmetCopper sulfide (CuS) thin films were produced by radio-frequency (RF) magnetron sputtering method. Structural, morphological and optical characteristics of deposited CuS films were presented. X-ray diffraction pattern showed two intensive peaks associated with hexagonal crystalline structure. Scanning electron microscopy image indicated that CuS films have nano-flake structured. Raman spectrum was reported to show vibrational characteristics of the CuS nano-flake thin films. Two peaks associated with Cu-S and S-S vibrations were observed in the Raman spectrum. Transmission spectra were recorded at various temperatures between 10 and 300 K. The analyses accomplished considering Tauc expression demonstrated that direct bandgap energy decreases from 2.36 eV (at 10 K) to 2.22 eV (at 300 K). Temperature-bandgap dependency was analyzed considering Varshni and Bose-Einstein expressions to reveal bandgap at 0 K, rate of change of bandgap and Debye temperature. CuS nanoflake thin film may be used in optoelectronic and photocatalysis applications thanks to its direct and narrow bandgap energy characteristics.
