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Article Citation - WoS: 7Citation - Scopus: 7Optical Properties of Gas Crystals: Combined Study of Temperature-Dependent Band Gap Energy and Oscillator Parameters(Natl inst Science Communication-niscair, 2017) Isik, Mehmet; Tugay, Evrin; Gasanly, Nizami; Department of Electrical & Electronics EngineeringOptical parameters of gallium sulfide (GaS) layered single crystals have been found through temperature-dependent transmission and room temperature reflection experiments in the wavelength range of 400-1100 nm. Experimental data demonstrates the coexistence of both optical indirect and direct transitions and the shift of the absorption edges toward lower energies by increasing temperature in the range of 10-300 K. Band gap at zero temperature, average phonon energy and electron phonon coupling parameter for indirect and direct band gap energies have been obtained from the analyses of temperature dependences of band gap energies. At high temperatures kT>> (E-ph), rates of band gap energy change have been found as 0.56 and 0.67 me V/K for E-gi and E-gd, respectively. Furthermore, the dispersion of refractive index has been discussed in terms of the Wemple-DiDomenico single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, oscillator strength and zero-frequency refractive index, have been found to be 4.48 eV, 24.8 eV, 6.99x10(13) m(-2) and 2.56, respectively. The results of the present work will provide an important contribution to the research areas related to the characterization and optoelectronic device fabrication using GaS layered crystals.Article Citation - WoS: 7Citation - Scopus: 6Tunable Nonlinear Absorption and Optical Limiting Behavior of Nabi(moxw1-x< Single Crystals With Ratio of Molybdenum/Tungsten(Iop Publishing Ltd, 2023) Pepe, Yasemin; Yildiz, Elif Akhuseyin; Isik, Mehmet; Karatay, Ahmet; Gasanly, Nizami; Elmali, AyhanThe compositional effect of Mo/W ratio on linear, nonlinear absorption and optical limiting behavior of the NaBi(MoxW1-xO4)(2) single crystals grown by Czochralski technique was investigated. X-ray diffraction patterns of the studied crystals presented well-defined peaks associated with the tetragonal crystalline structure. The nonlinear absorption performance and optical limiting threshold were determined using an open-aperture Z-scan technique. A theoretical model including one photon absorption (OPA), two photon absorption (TPA) and free carrier absorption was used to determine the nonlinear absorption parameters. All of the results showed that defect states, which strongly affect nonlinear absorption (NA) and optical limiting behaviors, can be tuned with the Mo/W ratio, enabling NaBi(MoxW1-xO4)(2) single crystals to be used in desired optoelectronic applications. Linear optical absorption analysis revealed that bandgap energy and defect states can be tuned by changing the Mo/W ratio in the crystal structure. The obtained results showed that all the studied crystals had NA behavior and the nonlinear absorption coefficient decreased with increasing Mo/W ratio. Sequential TPA is the main NA mechanism for these crystals due to the fact that the incident light energy is lower than the bandgap energies and the existence of the real intermediate state around 2.32 eV.Article Citation - WoS: 8Citation - Scopus: 9Revealing Photoluminescence and Nonlinear Optical Absorption Characteristics of Pbmo0.75w0.25< Single Crystal for Optical Limiting Applications(Iop Publishing Ltd, 2024) Dogan, Anil; Karatay, Ahmet; Isik, Mehmet; Yildiz, Elif Akhuseyin; Gasanly, Nizami; Elmali, AyhanNonlinear absorption properties of PbMo0.75W0.25O4 single crystal fabricated by the Czochralski method were studied. The band gap energy of the crystal was determined as 3.12 eV. Urbach energy which represents the defect states inside the band gap was found to be 0.106 eV. PbMo0.75W0.25O4 single crystal has a broad photoluminescence emission band between 376 and 700 nm, with the highest emission intensity occurring at 486 nm and the lowest intensity peak at 547 nm, depending on the defect states. Femtosecond transient absorption measurements reveal that the lifetime of localized defect states is found to be higher than the 4 ns pulse duration. Open aperture (OA) Z-scan results demonstrate that the PbMo0.75W0.25O4 single crystal exhibits nonlinear absorption (NA) that includes two-photon absorption (TPA) as the dominant mechanism at the 532 nm excitations corresponding to 2.32 eV energy. NA coefficient (beta(eff)) increased from 7.24 x 10(-10) m W-1 to 8.81 x 10(-10) m W-1 with increasing pump intensity. At higher intensities beta(eff) tends to decrease with intensity increase. This decrease is an indication that saturable absorption (SA) occurred along with the TPA, called saturation of TPA. The lifetime of the defect states was measured by femtosecond transient absorption spectroscopy. Saturable absorption behavior was observed due to the long lifetime of the localized defect states. Closed aperture (CA) Z-scan trace shows the sign of a nonlinear refractive index. The optical limiting threshold of PbMo0.75W0.25O4 single crystal at the lowest intensity was determined as 3.45 mJ/cm(2). Results show that the PbMo0.75W0.25O4 single crystal can be a suitable semiconductor material for optical limiting applications in the visible region.Article Citation - WoS: 3Citation - Scopus: 3Optical and Nanomechanical Properties of Ga2se3< Crystals and Thin Films(Springer, 2021) Isik, Mehmet; Emir, Cansu; Gullu, Hasan Huseyin; Gasanly, NizamiThe optical and nanomechanical properties of Ga(2)Se(3)single crystals and thin films were investigated using reflection, transmission, and nanoindentation measurements. The reflection spectrum recorded in the 525- to 1100-nm range was analyzed to get the band gap energy of the crystal structure, and derivative analysis of the spectrum resulted in band gap energy of 1.92 eV which was attributed to indirect transition. The band gap energy of thermally evaporated Ga(2)Se(3)thin film was determined from the analysis of the transmittance spectrum. The absorption coefficient analysis presented the direct band gap energy as 2.60 eV. The refractive index was investigated in the transparent region using the Wemple-DiDomenico single-oscillator model. Nanoindentation measurements were carried out on the crystal and thin film structures of Ga2Se3. Nanohardness and elastic modulus of the Ga(2)Se(3)single crystals and thin films were calculated following the Oliver-Pharr analysis method.
