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Article Citation - WoS: 5Citation - Scopus: 5Identification of Shallow Trap Centers in Inse Single Crystals and Investigation of Their Distribution: a Thermally Stimulated Current Spectroscopy(Elsevier, 2024) Isik, M.; Gasanly, N. M.Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10-280 K to explore trap centers in InSe crystal-a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T-stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.Article Citation - WoS: 20Citation - Scopus: 21Temperature-Tuned Band Gap Characteristics of Inse Layered Semiconductor Single Crystals(Elsevier Sci Ltd, 2020) Isik, M.; Gasanly, N. M.Layered structured InSe has attracted remarkable attention due to its effective characteristics utilized especially in optoelectronic device technology. This point directs researchers to investigate optical properties of InSe in great detail. The temperature dependent band gap characteristics of InSe and analyses performed on this dependency have been rarely studied in literature. Here, temperature-dependent transmission and room temperature reflection experiments were performed on InSe layered single crystals. The band gap energy was found around 1.22 eV at room temperature and 1.32 eV at 10 K. The temperature-gap energy dependency was analyzed using Varshni and O'Donnell-Chen models to reveal various optical parameters of the crystal. The structural characteristics; crystalline parameters like lattice constants, lattice strain, dislocation density and atomic compositions of InSe were also determined from the analyses of XRD and EDS measurements.
