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Article Citation - WoS: 13Citation - Scopus: 14Linear and Nonlinear Optical Properties of Bi12geo20 Single Crystal for Optoelectronic Applications(Elsevier Sci Ltd, 2023) Isik, M.; Gasanly, N. M.The present paper aims at presenting linear and nonlinear optical properties of Bi12GeO20 single crystals grown by Czochralski method. Transmission and reflection measurements were performed in the 400-1000 nm region. The recorded spectra were analyzed considering well-known optical models. Spectral dependencies of absorption coefficient, skin depth, refractive index, real and imaginary components of dielectric function were presented. The analyses performed on absorption coefficient showed direct bandgap and Urbach energies as 2.56 and 0.22 eV, respectively. The first-and third-order nonlinear susceptibilities and nonlinear refractive index of the crystal were also reported in the present work. The results of the present paper would provide valuable information for optoelectronic device applications of Bi12GeO20.Article Citation - WoS: 23Citation - Scopus: 25Investigation of Optical Properties of Bi12geo20< Sillenite Crystals by Spectroscopic Ellipsometry and Raman Spectroscopy(Elsevier Sci Ltd, 2020) Isik, M.; Delice, S.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.Bi12GeO20 (BGO) compound is one of the fascinating members of sillenites group due to its outstanding photorefractive and photocatalytic characteristics. The present paper aims at investigating optical properties of BGO crystals by means of spectroscopic ellipsometry and Raman spectroscopy measurements. Bi12GeO20 single crystals grown by Czochralski method were structurally characterized by X-ray diffraction (XRD) experiments and the analyses showed that studied crystals have cubic crystalline structure. Raman spectrum exhibited 15 peaks associated with A, E and F modes. Spectroscopic ellipsometry measurement data achieved in the energy region between 1.2 and 6.2 eV were used in the air/sample optical model to get knowledge about complex pseudodielectric constant, pseudorefractive index, pseudoextinction and absorption coefficients of the crystals. Spectral change of real and imaginary part of complex pseudodielectric constant were discussed in detail. Band gap energy of Bi12GeO20 single crystals was calculated to be 3.18 eV using absorption coefficient dependency on photon energy. Critical point energies at which photons are strongly absorbed were determined by utilizing the second energy derivative spectra of components of complex pseudodielectric function. Fitting of both spectra resulted in the presence of four interband transitions with energies of 3.49, 4.11, 4.67 and 5.51 eV.Article Citation - WoS: 6Citation - Scopus: 5Growth and Characterization of Pbmo0.75w0.25o4 Single Crystal: a Promising Material for Optical Applications(Elsevier Science Sa, 2023) Isik, M.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.The present paper reports the structural and optical properties of PbMo0.75W0.25O4 single crystals grown by Czochralski method. XRD pattern of the crystal indicated well-defined two diffraction peaks associated with tetragonal crystalline structure. Raman and infrared spectra of the grown single crystals were presented to get information about the vibrational characteristics. Observed Raman modes were associated with modes of PbMoO4 and PbWO4. Eight bands were revealed in the infrared spectrum. The bands observed in the spectrum were attributed to multiphonon absorption processes. Transmission spectrum was measured in the 375-700 nm spectral region. The analyses of the spectrum resulted in direct band gap energy of 3.12 +/- 0.03 eV. The compositional dependent band gap energy plot was drawn considering the reported band gap energies of PbMoO4, PbWO4 and revealed band gap of PbMo0.75W0.25O4 single crystal. An almost linear behavior of composition-band gap energy was seen for PbMo1-xWxO4 compounds. Urbach energy was also found from the absorption coefficient analysis as 0.082 +/- 0.002 eV.Article Citation - WoS: 5Citation - Scopus: 5Identification of Shallow Trap Centers in Inse Single Crystals and Investigation of Their Distribution: a Thermally Stimulated Current Spectroscopy(Elsevier, 2024) Isik, M.; Gasanly, N. M.Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10-280 K to explore trap centers in InSe crystal-a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the T-stop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.Article Citation - WoS: 8Citation - Scopus: 9Electronic, Optical and Thermodynamic Characteristics of Bi12sio20 Sillenite: First Principle Calculations(Elsevier Science Sa, 2021) Isik, M.; Surucu, G.; Gencer, A.; Gasanly, N. M.Bi12XO20 (X: Si, Ge, Ti) ternary semiconducting compounds are known as sillenites and take a remarkable attention thanks to their attractive photorefractive properties. The present paper reports electronic, optical and thermodynamic characteristics of Bi12SiO20 by means of density functional theory (DFT) calculations. The crystalline structure of the compound was revealed as cubic with lattice constant of 10.135 angstrom. XRD pattern obtained from DFT calculations were compared with experimental data and there is a good consistency between them. The electronic band structure and density of state plots were presented in detail. The band gap energy of the compound was determined from electronic band structure and spectra of optical constants. The spectral dependencies of real and imaginary components of dielectric function, refractive index, extinction coefficient, absorption coefficient and loss function were plotted in the 0-12 eV spectral range. The revealed structural, electronic and optical characteristics were discussed taking into account the previously reported theoretical and experimental studies on the Bi12SiO20 sillenite.Article Citation - WoS: 2Citation - Scopus: 2Optical Characterization of Nabi(moo4)2< Crystal by Spectroscopic Ellipsometry(Springer Heidelberg, 2024) Guler, I.; Isik, M.; Gasanly, N. M.The compound NaBi(MoO4)(2) has garnered significant interest in optoelectronic fields. This study employs spectroscopic ellipsometry to thoroughly examine the linear and nonlinear optical characteristics of NaBi(MoO4)(2) crystals, offering detailed insights into their optical behavior. Our investigation presents a precise method for discerning the crystal's spectral features, revealing the spectral variations of key optical parameters such as refractive index, extinction coefficient, dielectric function, and absorption coefficient within the 1.2-5.0 eV range. Through analysis, we determined optical attributes including bandgap energy, critical point energy, and single oscillator parameters. Additionally, we explored the nonlinear optical properties of NaBi(MoO4)(2), unveiling potential applications such as optoelectronic devices, frequency conversion, and optical sensors. This study enhances comprehension of optical properties of NaBi(MoO4)(2), underscoring its significance in future optical and electronic advancements.Article Citation - WoS: 5Citation - Scopus: 5Structural and Optical Properties of Thermally Evaporated (gase)0.75-(gas)0.25 Thin Films(Elsevier Gmbh, 2021) Isik, M.; Işık, Mehmet; Emir, C.; Gasanly, N. M.; Işık, Mehmet; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics EngineeringGaSe and GaS binary semiconducting compounds are layered structured and have been an attractive research interest in two-dimensional material research area. The present paper aims at growing (GaSe)0.75 - (GaS)0.25 (or simply GaSe0.75S0.25) thin film and investigating its structural and optical properties. Thin films were prepared by thermal evaporation technique using evaporation source of its single crystal grown by Bridgman method. The structural properties were revealed using x-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. XRD pattern and EDS analyses indicated that thin films annealed at 300 ?C were successfully deposited and its structural characteristics are well-consistent with its single crystal form. Surface morphology was studied by means of SEM and AFM measurements. Optical properties were investigated by transmission and Raman spectroscopy techniques. Raman spectrum exhibited three peaks around 172, 242 and 342 cm-1. Analyses of transmission spectrum revealed the direct band gap energy as 2.34 eV. The mixed compounds of GaSe0.75S0.25 were prepared for the first time in a thin film form and the results of the present paper would provide valuable information to research area in which layered compounds have been studied in detail.Article Citation - WoS: 10Citation - Scopus: 9Structural and temperature-tuned band gap energy characteristics of PbMoO4 single crystals(Elsevier, 2022) Isik, M.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.PbMoO4 is one of the member of the molybdate materials and has been a significant research interest due to its photocatalytic and optoelectronic applications. In the present paper, the structural and optical properties of PbMoO4 single crystals grown by Czochralski technique were investigated. X-ray diffraction pattern presented well-defined and intensive peaks associated with tetragonal scheelite structure. Energy dispersive spectroscopy analyses presented the atomic compositional ratio of constituent elements as consistent with chemical formula of PbMoO4. Raman and infrared transmittance spectra were reported to give information about the vibrational characteristics of the compound. Room temperature transmission spectrum was analyzed by derivative spectroscopy technique and band gap energy was found as 3.07 eV. Temperature-tuned band gap energy characteristics of the single crystal were investigated by performing transmission measurements at different temperatures between 10 and 300 K. The analyses indicated that band gap energy of the PbMoO4 single crystal increases to 3.24 eV when the temperature was decreased to 10 K. Temperature-band gap energy dependency was studied considering Varshni and Bose-Einstein models. The successful fitting processes under the light of applied models presented various optical parameters like absolute zero band gap energy, variation rate of band gap with temperature and Debye temperature.Article Citation - WoS: 1Citation - Scopus: 3Optical constants and critical point energies of (AgInSe2)0.75-(In2Se3)0.25 single crystals(Springer, 2020) Isik, M.; Nasser, H.; Guseinov, A.; Gasanly, N. M.AgInSe2 and In2Se3 are two attractive semiconducting materials for various technological applications especially for photovoltaic applications. In the present study, structural and optical properties of (AgInSe2)(x)-(In2Se3)(1-x) crystals for composition of x = 0.75 corresponding to chemical formula of Ag3In5Se9 were characterized by X-ray diffraction, energy-dispersive spectroscopy, room temperature transmission, and ellipsometry experiments. The transmittance spectrum was analyzed to reveal energy band gap. The derivative spectrophotometry analysis resulted in band gap energy of 1.22 eV. The spectra of complex dielectric function, refractive index and extinction coefficient were presented between 1.6 and 6.2 eV from the outcomes of ellipsometry analyses. Critical point energies have been determined using the derivative analyses of dielectric function. Five critical points at 2.70, 3.30, 4.05, 4.73, and 5.42 eV were revealed from the analyses. Crystal structure and atomic composition in semiconducting compound were also reported in the present work. The obtained results were compared with those reported for constituent compounds.Article Citation - WoS: 4Citation - Scopus: 4TL and OSL studies on gallium sulfide (GaS) single crystals(Elsevier, 2020) Isik, M.; Yuksel, M.; Topaksu, M.; Gasanly, N. M.[No Abstract Available]
