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Article Citation - WoS: 1A NEW FORMULATION FOR THE BOUNDARY ELEMENT ANALYSIS OF HEAT CONDUCTION PROBLEMS WITH NONLINEAR BOUNDARY CONDITIONS(Turkish Soc thermal Sciences Technology, 2019) Baranoglu, BesimAn effective numerical method based on the boundary element formulation is presented to solve heat conduction equations which are governed by the Fourier equation, with nonlinear boundary conditions on one or more sections of the prescribed boundary. The solution involves the manipulation of the system matrices of the boundary element method and obtaining a smaller ranked matrix equation in which the unknown is only the temperature difference over the nonlinear boundary condition region. This way, the iterations to deal with the nonlinear conditions are performed faster. After finding the solution over the nonlinear boundary condition region, the solution over the entire boundary is obtained as a post-process through a prescribed relation. An example with a proven exact solution is employed to assess the results.Article Citation - WoS: 2Citation - Scopus: 1Hydrogen Implantation Effects on the Electrical and Optical Properties of Inse Thin Films(Tubitak Scientific & Technological Research Council Turkey, 2012) Qasrawi, Atef Fayez; Ilaiwi, Khaled Faysal; Polimeni, AntonioThe effects of hydrogen ion implantation on the structural, electrical and optical properties of amorphous InSe thin films have been investigated. X-ray diffraction analysis revealed no change in the structure of the films. An implantation of 7.3 x 10(18) ions/cm(2) decreased the electrical conductivity by three orders of magnitude at 300 K. Similarly, the conductivity activation energy, which was calculated in the temperature range of 300-420 K, decreased from 210 to 78 meV by H-ion implantation. The optical measurements showed that the direct allowed transitions energy band gap of amorphous InSe films has decreased from 1.50 to 0.97 eV by implantation. Furthermore, significant decreases in the dispersion and oscillator energy, static refractive index and static dielectric constants are also observed by hydrogen implantation.
