Güllü, Hasan Hüseyin
Loading...
Profile URL
Name Variants
Gullu,H.H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
H.,Güllü
H.H.Güllü
G., Hasan Huseyin
Güllü, Hasan Hüseyin
H., Gullu
G.,Hasan Huseyin
H.H.Gullu
Hasan Hüseyin, Güllü
G.,Hasan Hüseyin
Hasan Huseyin, Gullu
Gullu, Hasan Huseyin
Güllü,H.H.
Gullu, H. H.
Gullu, Hasan H.
Job Title
Doktor Öğretim Üyesi
Email Address
hasan.gullu@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID
Sustainable Development Goals
14
LIFE BELOW WATER
0
Research Products
2
ZERO HUNGER
0
Research Products
11
SUSTAINABLE CITIES AND COMMUNITIES
0
Research Products
1
NO POVERTY
0
Research Products
12
RESPONSIBLE CONSUMPTION AND PRODUCTION
0
Research Products
7
AFFORDABLE AND CLEAN ENERGY
5
Research Products
5
GENDER EQUALITY
0
Research Products
3
GOOD HEALTH AND WELL-BEING
0
Research Products
9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
Research Products
13
CLIMATE ACTION
0
Research Products
6
CLEAN WATER AND SANITATION
0
Research Products
10
REDUCED INEQUALITIES
0
Research Products
4
QUALITY EDUCATION
0
Research Products
15
LIFE ON LAND
0
Research Products
16
PEACE, JUSTICE AND STRONG INSTITUTIONS
0
Research Products
17
PARTNERSHIPS FOR THE GOALS
0
Research Products
8
DECENT WORK AND ECONOMIC GROWTH
0
Research Products
This researcher does not have a Scopus ID.
This researcher does not have a WoS ID.
Scholarly Output
55
Articles
52
Views / Downloads
7/0
Supervised MSc Theses
1
Supervised PhD Theses
0
WoS Citation Count
873
Scopus Citation Count
899
WoS h-index
16
Scopus h-index
16
Patents
0
Projects
0
WoS Citations per Publication
15.87
Scopus Citations per Publication
16.35
Open Access Source
8
Supervised Theses
1
Google Analytics Visitor Traffic
| Journal | Count |
|---|---|
| Journal of Materials Science: Materials in Electronics | 16 |
| Physica B: Condensed Matter | 7 |
| Bulletin of Materials Science | 3 |
| Materials Science in Semiconductor Processing | 3 |
| Optik | 3 |
Current Page: 1 / 5
Scopus Quartile Distribution
Competency Cloud
55 results
Scholarly Output Search Results
Now showing 1 - 10 of 55
Article Citation - WoS: 9Citation - Scopus: 10Temperature Effects on Optical Characteristics of Cdse Thin Films(Elsevier Sci Ltd, 2021) Gullu, H. H.; Isik, M.; Surucu, O.; Gasanly, N. M.; Parlak, M.CdSe is one of the significant members of II-VI type semiconducting family and it has a wide range of technological applications in which optoelectronic devices take a special position. The present paper reports the structural and optical characteristics of thermally evaporated CdSe thin films. XRD pattern exhibited preferential orientation along (111) plane while atomic composition analyses resulted in the ratio of Cd/Se as closer to 1.0. Temperature-dependent band gap characteristics of CdSe thin films were investigated for the first time by carrying out transmission experiments in the 10-300 K range. The analyses showed that direct band gap energy of the compound decreases from 1.750 (at 10 K) to 1.705 eV (at 300 K). Varshni model was successfully applied to the temperature-band gap energy dependency and various optical constants were determined. Raman spectrum of CdSe thin films was also presented to understand the vibrational characteristics of the compound. The present paper would provide worthwhile data to researchers especially studying on optoelectronic device applications of CdSe thin films.Article Citation - WoS: 47Citation - Scopus: 44Investigation of Structural, Electronic, Magnetic and Lattice Dynamical Properties for Xcobi (x: Ti, Zr, Hf) Half-Heusler Compounds(Elsevier, 2020) Surucu, Gokhan; Isik, Mehmet; Candan, Abdullah; Wang, Xiaotian; Gullu, Hasan HuseyinStructural, electronic, magnetic, mechanical and lattice dynamical properties of XCoBi (X: Ti, Zr, Hf) Half-Heusler compounds have been investigated according to density functional theory and generalized gradient approximation. Among alpha, beta and gamma structural phases, gamma-phase structure has been found as the most stability characteristics depending on the calculated formation enthalpies, energy-volume dependencies and Cauchy pressures. Energy-volume plots of possible magnetic orders of gamma-phase XCoBi compounds have been analyzed and the most stable order has been found as paramagnetic nature. The theoretical studies on gamma-phase structures resulted in band gap energies of 0.96, 0.99 and 0.98 eV for TiCoBi, ZrCoBi and HfCoBi semiconducting compounds, respectively. Born-Huang criteria applied on elastic constants of interest compounds has indicated that gamma-phase is also mechanically stable for all studied compounds. In addition, various mechanical, lattice dynamical and thermodynamical parameters of XCoBi compounds have been calculated in the present study.Article Citation - WoS: 9Citation - Scopus: 9Optical Band Gap and Dispersion of Optical Constants of Cu-Ga Thin Films(Elsevier Gmbh, 2019) Isik, M.; Gullu, H. H.; Coskun, E.; Gasanly, N. M.Thermally deposited Cu-Ga-S thin films were optically characterized by means of experimental techniques of transmission measurements. The analyses of transmittance spectra were accomplished by derivative spectrophotometry analyses to get gap energies of thin films. The transmittance spectra of thin films annealed at different temperatures presented interference fringes which were analyzed by Swanepoel envelope method. The wavelength dependencies of optical parameters; refractive index (n), real part of complex dielectric function (epsilon(re)) and extinction coefficient (k) were reported in the weak absorption region. The photon energy dependencies of n and epsilon(re) were analyzed using single-oscillator and Spitzer-Fan models, respectively.Article Citation - WoS: 8Citation - Scopus: 9First-principles studies of Tin+1SiNn (n=1, 2, 3) MAX phase(Taylor & Francis Ltd, 2020) Surucu, Gokhan; Gullu, Hasan Huseyin; Candan, Abdullah; Yildiz, Bugra; Erkisi, AytacIn this study, the structural, electronic, mechanical, lattice dynamical and thermodynamic characteristics of ( 1, 2 and 3) phase compounds were investigated using the first principle calculations. These ternary nitride compounds were found to be stable and synthesisable, and the results on the stability nature of them were also evaluated for the possible and phases. -was found to be the most stable one among these new class of layered phases for which limited works are available in the literature. The band structures, that are essential for the electronic properties, were determined along with the partial density of states (PDOS) indicating the metallic behaviour of these compounds. The polycrystalline elastic moduli were calculated based on the single-crystal elastic constants and the mechanical stabilities were verified. Some basic physical parameters, such as bulk modulus, shear modulus, Young's modulus, Poisson's ratio, Debye temperature, and sound velocities, were also predicted. Furthermore, the anisotropic elastic properties were visualised in three dimensions (3D) for Young's modulus, linear compressibility, shear modulus and Poisson's ratio as well as with the calculation of the anisotropic factors. - phase showed the most isotropic characteristics with minimum deviations. These theoretical values were also used to identify the stiffness and ionic characteristics. The phonon dispersion curves and corresponding PDOS indicated that compounds were dynamically stable. Moreover, thermodynamic properties obtained from phonon dispersion curves were investigated in detail.Article Citation - WoS: 42Citation - Scopus: 41Analysis of Forward and Reverse Biased Current-Voltage Characteristics of Al/Al2< Schottky Diode With Atomic Layer Deposited Al2o3< Thin Film Interlayer(Springer, 2019) Gullu, H. H.; Yildiz, D. E.The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias regions, the temperature-dependent I-Vcharacteristics are detailed in terms of diode parameters and dominant conduction mechanisms. Due to the existence of Al2O3 film layer and series resistance in the diode structure, current flow under the forward bias is observed in a deviation from pure exponential characteristics. The diode parameters are estimated from thermionic emission model with non-unity ideality factor, and this non-ideal behavior is resulted in the ideality factors greater than two. In addition to these values, zero-bias barrier height is found to be strongly temperature dependent, and this variation indicates a presence of inhomogeneties in the barrier according to Gaussian distribution (GD) approximation. This fact is investigated plotting characteristic plot of this model and by extracting mean barrier height with its standard deviation. In order to complete the work on the forward I-V region, the carrier transport characteristics of the diode are explained on the basis of thermionic emission mechanism with a GD of the harrier heights. In accordance with this approximation, the conventional Richardson plot exhibits non-linearity behavior and modified current relation based on GD model is used to calculate mean barrier height and Richardson constant. In addition, the values of parasitic resistances are determined using Ohm's law as a function of temperature for all bias voltage spectra. In the reverse bias region, Poole-Frenkel effect is found to be dominant on the conduction associated with the barrier lowering, and barrier height in the emission process from the trapped states, and high-frequency dielectric constant of Al2O3 film layer is calculated.Article Citation - WoS: 11Citation - Scopus: 8Fabrication and Characterization of Tio2 Thin Film for Device Applications(World Scientific Publ Co Pte Ltd, 2019) Hosseini, A.; Gullu, H. H.; Coskun, E.; Parlak, M.; Ercelebi, C.Titanium oxide (TiO2) film was deposited by rectification factor (RF) magnetron sputtering technique on glass substrates and p-Si (111) wafers to fabricate n-TiO2/p-Si heterojunction devices for the investigation of material and device properties, respectively. The structural, surface morphology, optical and electrical properties of TiO(2 )film were characterized by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), UV-visual (UV-Vis) spectral and dark current-voltage (I-V) measurement analyses. The deposited film layer was found to be homogeneous structure with crack-free surface. The bandgap value of TiO2 film was determined as 3.6 eV and transmission was around 65-85% in the spectral range of 320-1100 nm. The conductivity type of the deposited film was determined as n-type by hot probe method. These values make TiO2 film a suitable candidate as the n-type window layer in possible diode applications. TiO2 film was also deposited on p-Si (111) wafer to obtain Al/n-TiO2/p-Si/Al heterojunction device structure. The dark I-V characteristic was studied to determine the possible conduction mechanisms and diode parameters.Article Citation - WoS: 12Citation - Scopus: 14Analysis of Temperature-Dependent Forward and Leakage Conduction Mechanisms in Organic Thin Film Heterojunction Diode With Fluorine-Based Pcbm Blend(Springer, 2020) Yildiz, D. E.; Gullu, H. H.; Toppare, L.; Cirpan, A.The forward and reversed biased current-voltage behaviors of the organic diode were detailed in a wide range of temperatures. In this diode, a donor-acceptor-conjugated copolymer system was constructed with poly((9,9-dioctylfluorene)-2,7-diyl-(2-dodecyl-benzo[1,2,3]triazole)) as a partner of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). Two-order of magnitude rectification ratio was achieved, and the temperature-dependent values of saturation current, zero-bias barrier height, and ideality factor were extracted according to the thermionic emission model. The temperature responses of these diode parameters showed an existence of inhomogeneity in the barrier height formation. As a result, the observed non-ideal behavior was explained by Gaussian distribution of barrier height where low-barrier regions are effective in the forward biased conduction mechanism at low temperatures. Together with this analysis, series resistances were evaluated using Cheung's functions and also density of interface states were investigated. On the other hand, reverse biased current flow was found under the dominant effect of Poole-Frenkel effects associated with these interfacial traps. The reverse current conduction mechanism was detailed by calculating characteristic field-lowering coefficients and barrier height values in the emission process from the trapped state in the range of temperatures of interest.Article Deposition and Characterization of Znsnse2 Thin-Films Deposited by Using Sintered Stoichiometric Powder(2019) Sürücü, Özge Bayraklı; Güllü, Hasan HüseyinIn this work, ZnSnSe2 (ZTSe) thin films were deposited using crystalline powder grown by vertical Bridgman-Stockbarger technique. The deposition process was carried out by means of e-beam evaporation on the well-cleaned soda lime glass substrates and keeping them at the substrate temperature of 200°C. The structural, optical and electrical properties of ternary ZTSe thin films were investigated depending on the annealing temperature at 250 and 300°C. X-ray diffraction analysis showed that as-grown films were in amorphous structure, however annealing at 250°C triggered the crystallization on the preferred ternary structure and annealing at 300°C resulted in the changes from amorphous to the polycrystalline structure. Using the compositional analysis, the detail information about the stoichiometry and the segregation mechanisms of the constituent elements in the structure were determined for both as-grown and annealed samples. In addition, they were morphologically characterized using scanning electron microscopy technique. The electrical properties were analyzed using temperature dependent dark- and photo-conductivity measurements. From the variation of electrical conductivity as a function of the ambient temperature, the current transport mechanisms and corresponding activation energies at specific temperature intervals for each sample were determined. The optical properties for the ZTSe thin films were studied depending on the structural changes with annealing.Article Citation - WoS: 32Citation - Scopus: 32Capacitance, Conductance, and Dielectric Characteristics of Al/Tio2< Diode(Springer, 2021) Gullu, H. H.; Yildiz, D. E.In this study, electrical properties of the Al/TiO2/p-Si diode structure with an atomic layer deposited TiO2 interface layer are investigated by current-voltage (I-V), capacitance-voltage (C - V), and conductance-voltage (G - V) measurements. It shows a rectifying behavior with about four order of rectification factor, and barrier height and ideality factor are calculated from the rectification curve. Dielectric parameters are determined from frequency-dependent C - V and G - V relations. The experimental results show that both of these curves are in a strong response to the frequency and bias voltage. They are found in decreasing behavior with increasing frequency, and both of them increase with increase in bias voltage although there are different increasing trends. At reversed bias voltage region, barrier potential, Fermi level energy, and interface charge carrier contribution are evaluated by using 1/C-2 - V plot. Series resistance values are also calculated under the variation of frequency and voltage. Thus, the capacitive characteristics of the diode are corrected by eliminating series resistance contribution together with the possible effect on interface charge carriers. Detailed information is obtained by determining electronic parameters affected by interface states over a wide frequency range (1 kHz to 1 MHz). At this point, strong response to the frequency is observed for the dielectric constant. Under the effect of interfacial polarization at low-frequency region, interface charge contribution to the capacitive response of the diode is obtained. Further analysis is performed on electrical modulus and impedance values derived from experimental dielectric data. Existence of interfacial layer capacitance is detailed by extracting distribution of interface charges from capacitance and conductance profiles of the diode under the effect of frequency.Article Citation - WoS: 5Citation - Scopus: 5Influence of Layer on the Electrical Properties of Au/N-4h Sic Diodes(indian Acad Sciences, 2018) Yigiterol, Fatih; Gullu, Hasan H.; Yildiz, Esra D.In this study, the effect of insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current-voltage (), capacitance-voltage () and conductance-voltage () measurements were carried out at room temperature condition. Under thermionic emission model, electrical parameters as zero-bias barrier height (), ideality factor (n), interface states (), and series () and shunt () resistances were estimated from forward bias analyses. The values of n and were about 1.305 and 0.796 eV for metal-semiconductor (MS) rectifying diode, and 3.142 and 0.713 eV for metal-insulator-semiconductor (MIS) diode with the insertion of layer, respectively. Since the values of n were greater than the unity, the fabricated diodes showed non-ideal behaviour. The energy distribution profile of of the diodes was calculated by taking into account of the bias dependence of the effective barrier height () and . The obtained values with are almost one order of magnitude lower than those without for two diodes. According to Cheung's model, were calculated and these values were found in increasing behaviour with the contribution of insulator layer. In addition, the plot behaviours with linear dependence between ln() vs. indicated that the dominant conduction mechanism in the reverse bias region was Schottky effect for both MS and MIS diodes. In the room temperature measurements, different from the results of MIS diode, the values of C for MS diode was observed in decreasing behaviour from ideality with crossing the certain forward bias voltage point ( ). The decrease in the negative capacitance corresponds to the increase of G / w.
