Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
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Doçent Doktor
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atef.qasrawi@atilim.edu.tr
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Department of Electrical & Electronics Engineering
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Former Staff
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Scholarly Output

226

Articles

222

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84/0

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WoS Citation Count

1984

Scopus Citation Count

2000

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WoS Citations per Publication

8.78

Scopus Citations per Publication

8.85

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17

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0

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Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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Author: Qasrawi, Atef F.Start date: 2020

Scholarly Output Search Results

Now showing 1 - 7 of 7
  • Thumbnail Image
    Article
    Citation - WoS: 12
    Citation - Scopus: 12
    Band Offsets, Optical Conduction, and Microwave Band Filtering Characteristics of Γ-in2se3< Heterojunctions
    (Wiley-v C H verlag Gmbh, 2020) Qasrawi, Atef F.; Kmail, Reham R.
    Herein, the design and experimental characterization of gamma-In2Se3/CuO interfaces are considered. Thin films of gamma-In(2)Se(3)are coated with thin layers of CuO at room temperature. The heterojunction device is structurally, morphologically, and optically characterized. It is observed that the coating of CuO onto gamma-In(2)Se(3)engenders the formation of CuSe(2)at the ultrathin interface. The gamma-In2Se3/CuO heterojunctions exhibit maximum possible conduction and valence band offsets of values 0.47 and 0.96 eV, respectively. The dielectric spectra display two dielectric resonance peaks at 2.96 and 1.78 eV. In addition, analyses of the optical conductivity spectra reveal accurate drift mobility and plasmon frequency values of 31.31 cm(2) Vs(-1)and 1.5 GHz, respectively. The ability of the device to control the signal propagation at gigahertz level is experimentally tested by the impedance spectroscopy technique which proved the ability of the device to behave as bandpass filters of notch frequency of 1.49 GHz. The gamma-In2Se3/CuO heterojunction devices are also observed to display terahertz cutoff frequency values of approximate to 24 THz in the infrared (IR) range of incident photon energy and approximate to 193 THz in the ultraviolet light range. The nonlinear optical performance of the device nominates it for use as terahertz/gigahertz band filters.
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    Article
    Citation - WoS: 16
    Al/Moo3< Broken Gap Tunneling Hybrid Devices Design for Ir Laser Sensing and Microwave Filtering
    (Ieee-inst Electrical Electronics Engineers inc, 2020) Qasrawi, Atef F.; Khanfar, Hazem K.
    Herein the design of broken gap heterojunction devices made of molybdenum trioxide and zinc phthalocyanine coated onto Al substrates are reported. The devices which are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit a conduction and valence band offsets of 3.36 and 3.56 eV, respectively. The heterojunction devices are observed to form a subband gap of 0.66 eV between the valence bands edges of p- ZnPc and conduction bands edges of p-MoO3 leading to a p(+)/n(+) heterojunction type. Analysis of the current-voltage characteristics of the devices has shown that it exhibits tunneling diode characteristics with maximum tunneling barriers of width of similar to 45 nm. The device displayed biasing dependent photosensitivity in response to 850 nm laser lights. In addition to its characteristics as MOS device, when it was imposed with ac signals in the frequency domain of 0.01-1.80 GHz, it displayed resonance-antiresonancephenomena accompanied with negative capacitance effect in the studied range of spectra. The analysis of the alternating current (ac) electrical conductivity has shown that the ac conduction is mostly governed by quantum mechanical tunneling assisted with correlated barriers hopping. The laser light photosensitivity, the negative capacitance effect, the capacitance switching within 100 ns and the bandpass characteristics with notch frequency of 1.24 GHz make the Al/MoO3/ZnPc/Al attractive for use as IR sensors, parasitic capacitance cancellers, fast capacitance switches and microwave bandpass filters.
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    Article
    Citation - WoS: 3
    Citation - Scopus: 3
    Enhancement of Nonlinear Optical and Dielectric Properties of Cu2o Films Sandwiched With Indium Slabs
    (Wiley-v C H verlag Gmbh, 2020) Omar, Ahmad; Qasrawi, Atef F.
    In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu2O are reported. Cu2O/In/Cu2O thin films coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically, and dielectrically studied. The glassy films of Cu2O display larger, well-ordered grains in an amorphous sea of Cu2O upon insertion of indium slabs between layers of Cu2O. Optically, the indium slabs increase the light absorbability in the IR region by 12.5 times, narrow the energy bandgap, and widen the energy band tails region. They also enhance the nonlinearity in the dielectric response and increase the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses reveal an enhancement in the drift mobility, plasmon frequency, and free carrier density via stacking of the indium layer between layers of Cu2O. The drift mobility and plasmon frequency values reach 232.4 cm(2) V-1 s(-1) and 3.95 GHz at a reduced hole-plasmon frequency value of 6.0 x 10(14) Hz (2.48 eV). The values are promising as they indicate the applicability of Cu2O/In/Cu2O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities.
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    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Tungsten Doped Bi1.5zn0.92< Ceramics Designed as Radio/Microwave Band Pass/Reject Filters
    (Wiley, 2021) Qasrawi, Atef F.; Abdalghafour, Mays A.; Mergen, A.
    Herein, radiowave/microwave bandpass/reject filters are fabricated from the tungsten doped Bi1.5Zn0.92Nb1.5-6x/5WxO6.92 (W-BZN) pyrochlore ceramics. The W-BZN band filters are prepared by the solid state reaction technique and subjected to X-ray diffraction (XRD) and impedance spectroscopy analyses. It was shown that the W-BZN filters can display negative capacitance effects accompanied with resonance-antiresonance oscillations. The calculations of the reflection coefficient parameter (S-11), the return loss (L-r) and the voltage standing wave ratios (VSWR) in the frequency domain of 0.01 to 1.80 GHz, has shown that the W-BZN device can perform as microwave cavities at two notch frequency values of 0.44 and 1.53 GHz. W-BZN devices can also be nominated as noise reducers and radiowave/microwave signal receivers suitable for telecommunication technology.
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    Article
    Citation - WoS: 9
    Citation - Scopus: 11
    Thickness Effects on the Dielectric Dispersion and Optical Conductivity Parameters of Cuo Thin Films
    (Wiley, 2020) Qasrawi, Atef F.; Qasrawı, Atef Fayez Hasan; Hamamdah, Alaa A.; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    In this article, the effect of film thickness on the structural, optical, dielectric, and optical conductivity parameters of CuO thin films are reported. CuO thin films which are prepared by the physical vapor deposition technique under vacuum pressure of 10(-5) mbar with various thicknesses in the range of 50 to 1000 nm are observed to exhibit amorphous nature of growth. The values of the energy bands gaps, the spectral response of the dielectric constant and of the optical conductivity parameters are highly sensitive to the film thickness. Particularly, while the 50 nm thick CuO films exhibits quantum confinement which forces the material to have wide band gap (2.70 eV), the thicker films display an energy band gap in the infrared range of spectrum. It was also observed that the thicker the films, the more pronounced the nonlinear dielectric response. In addition, analysis of the optical conductivity parameters using Drude-Lorentz approach for optical conduction has shown that the 50 nm thick films can display drift mobility value of 4.65 cm(2)/Vs accompanied with plasmon frequency of 1.20 GHz and free carrier density of 7.5x10(17) cm(3). The Drude-Lorentz analysis has also shown that the free carrier density and the plasmon frequency of CuO decreases with increasing film thickness. This decrement is accompanied with enhancement in the drift mobility values which reaches 12.56 cm(2)/V s as the film thickness exceeds 250 nm. Such features of the thin layer of CuO make them suitable for the production of nano/microthin film transistors.
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    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Pseudodielectric Dispersion in As2se3< Thin Films
    (Wiley-v C H verlag Gmbh, 2020) Kayed, Tarek S.; Kayed, Tarek Said; Qasrawi, Atef F.; Qasrawı, Atef Fayez Hasan; Kayed, Tarek Said; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    Herein, X-ray diffraction, energy dispersive X-ray spectroscopy, and spectral ellipsometry techniques are used to investigate the structural, pseudo-optical, and pseudodielectric properties of arsenic selenide thin films. The stoichiometric films which are prepared by the thermal evaporation technique are found to prefer the amorphous nature of growth. While the pseudoabsorption coefficient spectra display strong absorption bands at 1.84, 1.81, 1.41, and 1.13 eV, the preferred pseudo-optical transitions happen within a direct forbidden energy bandgap of 1.80 eV. In addition, the real part of the pseudodielectric spectra displays three strong resonance peaks at critical energy values of 2.33, 1.90, and 1.29 eV. Modeling of the imaginary part of the pseudodielectric constant spectra in accordance with the Drude-Lorentz approach results in the existence of six linear oscillators. The response of arsenic selenide to elliptically polarized light signals shows that the films exhibit drift mobility, free electron concentration, and plasmon frequency values in the ranges of 0.21-43.96 cm(2) V(-1)s(-1), 1.90-58.0 x 10(19) cm(-3), and 5.8-32.0 GHz, respectively. The optical conductivity parameters for As2Se3 film nominate it as a promising candidate for the fabrication of tunneling diodes suitable for microwaves filtering up to 32.0 GHz and as thin-film transistors.
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    Article
    Citation - WoS: 6
    Citation - Scopus: 6
    Dielectric Dispersion at the Mn/Znpc Interfaces
    (Wiley-v C H verlag Gmbh, 2020) Qasrawi, Atef F.; Zyoud, Hadeel M.
    Herein, the effects of manganese transparent (150 nm) substrates on the structural, nonlinear optical, and dielectric properties of zinc phthalocyanine are explored. ZnPc thin films are observed to exhibit deformed crystal structure associated with remarkable enhancement in the light absorbability by 21 times at 2.62 eV and by 173 times in the near-infrared (NIR) region of light upon replacement of glass by transparent Mn substrates. The Mn layer also causes a redshift in the energy bandgap, allows generation of free carrier absorption process and increases the dielectric constant by more than 169% in the NIR region. The interaction between the manganese substrates with the organic ZnPc thin layers decreases the free holes density, widens the plasmon frequency range, and improves the drift mobility of holes. The nonlinear dielectric response with the highly improved light absorbability in the NIR range of light nominates the Mn/ZnPc thin films for optoelectronic applications.