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Article Citation Count: 8Electroinitiated polymerization of 2-allylphenol(Springer-verlag, 2000) Cihaner, Atilla; Önal, AM; Chemical EngineeringRedox behaviour of 2-allylphenol (2APhOH) was studied by using cyclic voltammetry (CV) and electroinitiated polymerization was conducted at the measured peak potentials. Constant potential electrolysis (CPE) of the monomer was carried out in acetonitrile-sodium perchlorate, solvent-electrolyte couple, at room temperature. Polymerization of the monomer yielded insoluble polymer films on the surface of the electrode together with the low molecular weight polymers in the bulk of the solution. The structural analysis of the polymers were carried by H-1-NMR and FTIR spectroscopy. Molecular weight of the soluble polymer was determined by GPC. Thermal properties of the polymer film and soluble polymer were studied by DSC. The course of electroinitiated polymerization was monitored by in-situ UV-VIS spectroscopy.Conference Object Citation Count: 9Effect of lithium doping on the properties of Tl-based superconductors(Iop Publishing Ltd, 2001) Kayed, Tarek Said; Özkan, Hakan; Gasanly, NM; Department of Electrical & Electronics EngineeringThe effects of lithium doping on the formation and properties of the T1-based superconductors have been studied. Lithium atoms up to around 3 mol.% have been added to the oxides of nominal composition Tl1.8Ba2Ca2.2Cu3Ox, and the usual solid-state reaction method has been applied. Lithium additions in the range 0.23-0.29 mol.% increase the fraction of the Tl-2223 phase and significantly improve the critical temperature of the samples. Higher amounts of lithium additions diminish the Tl-2223 phase, reduce the fraction of the Tl-2212 phase, and cause separate non-superconducting phases to be formed.Article Citation Count: 19Crystal data, photoconductivity and carrier scattering mechanisms in CuIn5S8 single crystals(Wiley-v C H verlag Gmbh, 2001) Qasrawı, Atef Fayez Hasan; Gasanly, NM; Department of Electrical & Electronics EngineeringThe X-ray diffraction has revealed that CuIn5S8 is a single phase crystal of cubic spinet structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn5S8 crystals are measured in the temperature range of 50-400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of similar to1.35 eV at 0 K, a carrier effective mass of 0.2 m(0), an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.Article Citation Count: 25Crystal data, electrical resistivity, and Hall mobility of n-type AgIn5S8 single crystals(Wiley-v C H verlag Gmbh, 2001) Qasrawı, Atef Fayez Hasan; Gasanly, NM; Department of Electrical & Electronics EngineeringThe X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Article Citation Count: 20Characterization of p-In2Se3 thin films(Kluwer Academic Publ, 2001) Qasrawı, Atef Fayez Hasan; Parlak, M; Erçelebi, Ç; Günal, I; Department of Electrical & Electronics EngineeringIndium selenide thin films were deposited onto glass substrates kept at 150 degreesC by thermal evaporation of alpha -In2Se3. Some of the films were annealed at 150 degreesC and 200 degreesC and they all were found to exhibit p-type conductivity without intentional doping. Scanning electron microscopy (SEM) established that the films have an atomic content of In51Se49. X-ray diffraction (XRD) indicated that the as-grown films were amorphous in nature and became polycrystalline \beta-In2Se3 films after annealing. The analysis of conductivity temperature-dependence measurements in the range 320-100 K revealed that thermal excitation and thermionic emission of the carriers are the predominant conduction mechanisms above 200 K in the amorphous and polycrystalline samples, respectively. The carrier transport below 200 K is due to variable range hopping in all the samples. Hall measurements revealed that the mobility of the polycrystalline films is limited by the scattering of the charged carriers through the grain boundaries above 200 K. (C) 2001 Kluwer Academic Publishers.Article Citation Count: 5Electrochemical polymerization of 4-allylanisole(Pergamon-elsevier Science Ltd, 2001) Cihaner, Atilla; Testereci, HN; Önal, AM; Chemical EngineeringElectrochemical polymerization of 3-allylanisole (4AA). via constant potential electrolysis, has been investigated in acetonitrile using two different supporting electrolytes. Redox behavior of the monomer was also studied in the same solvent-electrolyte couples at room temperature. Electrochemical polymerization of the monomer yielded insoluble polymer films on the electrode surface, which bears a very low conductivity, together with the low molecular weight polymers in the bulk of the solution. The decrease in the monomer concentration, during the electrochemical polymerization. was monitored by taking the cyclic voltammogram of the electrolysis solution. The effect of temperature on the rate of electrochemical polymerization was: also studied. The polymers were characterized by taking the H-1-NMR and FTIR spectra. Molecular weight of the soluble polymer was determined by vapor pressure osmometry. Thermal analysis of the polymer film and soluble polymer were done by DSC. (C) 2001 Elsevier Science Ltd. All rights reserved.Article Citation Count: 65Doubly warped products(Elsevier Science Bv, 2001) Ünal, Bernis; Department of Modern LanguagesIn this paper we study geodesic completeness of Riemannian doubly warped products and Lorentzian doubly warped products. We give necessary conditions for generalized Robertson-Walker spacetimes with doubly warped product spacial parts to be globally hyperbolic. We also state some results about killing and conformal vector fields of doubly warped products.Article Citation Count: 1Sets of random variables with a given uncorrelation structure(Elsevier Science Bv, 2001) Ostrovska, Sofiya; MathematicsLet xi (1),...,xi (n) be random variables having finite expectations. Denote i(k) := # {(j(1),...,j(k)): 1 less than or equal to j(1) < ... < j(k) less than or equal to n and E (l=1)pi (k) xi (fi) = (l=1)pi (k) E xi (h)}, k = 2,...,n. The finite sequence (i(2),...,i(n)) is called the uncorrelation structure of xi (1),...,xi (n). It is proved that for any given sequence of nonnegative integers (i(2),...,i(n)) satisfying 0 less than or equal to i(k) less than or equal to ((n)(k))and any given nondegenerate probability distributions P-1,...,P-n there exist random variables eta (1),...,eta (n) with respective distributions P-1,...,P-n such that (i(2),...,i(n)) is their uncorrelation structure. (C) 2001 Elsevier Science B.V. All rights reserved.Article Citation Count: 57A curvature condition for a twisted product to be a warped product(Springer-verlag, 2001) Ünal, Bernis; García-Río, E; Kupeli, DN; Ünal, B; Department of Modern LanguagesIt is shown that a mixed Ricci-flat twisted product semi-Riemannian manifold can be expressed as a warped product semi-Riemannian manifold. Asa consequence, any Einstein twisted product semi-Riemannian manifold is in fact, a warped product serni-Riemannian manifold.Article Citation Count: 7Photoelectronic and electrical properties of InS crystals(Iop Publishing Ltd, 2002) Qasrawı, Atef Fayez Hasan; Gasanly, NM; Department of Electrical & Electronics EngineeringTo identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an additional two independent donor levels with activation energies of (50 +/- 2) and (164 +/- 4) meV indicating the extrinsic nature of conductivity. The spectral distribution of photocurrent in the photon energy range of 0.8-3.1 eV reveals an indirect band gap of (1.91 +/- 0.04) eV. The photocurrent-illumination intensity dependence follows the law I-ph proportional to F-gamma, with gamma being 1.0 and 0.5 at low and high illumination intensities indicating the domination of monomolecular and bimolecular recombination, respectively. It is observed that the photocurrent increases in the temperature range of 10 K up to T-m = 110 K and decreases or remains constant for 110 K < T < 160 K and increases again above 160 K. The temperature dependence of the photocurrent reveals an additional shallow impurity level with activation energies of 3 meV.Article Citation Count: 1The local Mobius equation and decomposition theorems in Riemannian geometry(Canadian Mathematical Soc, 2002) Fernández-López, M; García-Río, E; Kupeli, DNA partial differential equation, the local Mobius equation, is introduced in Riemannian geometry which completely characterizes the local twisted product structure of a Riemannian manifold. Also the characterizations of warped product and product structures of Riemannian manifolds are made by the local Mobius equation and an additional partial differential equation.Article Citation Count: 25Classification theorems for general orthogonal polynomials on the unit circle(Academic Press inc Elsevier Science, 2002) Khrushchev, Sergey; MathematicsThe set P of all probability measures a on the unit circle T splits into three disjoint subsets depending on properties of the derived set of {\phi(n)\(2) dsigma}(ngreater than or equal to0), denoted by Lim(sigma). Here {phi(n)}(ngreater than or equal to0) are orthogonal polynomials in L-2(dsigma). The first subset is the set of Rakhmanov measures, i.e., of sigma is an element of P with {m} = Lim(sigma), m being the normalized (m(T) = 1) Lebesgue measure on T. The second subset Mar(T) consists of Markoff measures, i.e., of sigma is an element of P with m is not an element of Lim(sigma), and is in fact the subject of study for the present paper. A measure sigma, belongs to Mar(T) iff there are epsilon > 0 and l > 0 such that sup{\a(n+j)\: 0 less than or equal to j less than or equal to l) > epsilon, n = 0, 1, 2,..., {a(n)} is the Geronimus parameters (= reflection coefficients) of sigma. We use this equivalence to describe the asymptotic behavior of the zeros of the corresponding orthogonal polynomials (see Theorem G). The third subset consists of sigma is an element of P with {m} not subset of or equal toLim(sigma). We show that sigma is ratio asymptotic iff either sigma is a Rakhmanov measure or sigma satisfies the Lopez condition (which implies sigma is an element of Mar(T)). Measures sigma satisfying Lim(sigma) = {v} (i.e., weakly asymptotic measures) are also classified. Either v is the sum of equal point masses placed at the roots of z(n) = lambda, lambda is an element of T, n = 1, 2,..., or v is the equilibrium measure (with respect to the logarithmic kernel) for the inverse image under an m-preserving endomorphism z -->z(n), = 1, 2,..., of a closed arc J (including J = T) with removed open concentric are J(0) (including J(0) = empty set). Next, weakly asymptotic measures are completely described in terms of their Geronimus parameters. Finally, we obtain explicit formulae for the parameters of the equilibrium measures v and show that these measures satisfy {v} = Lim(v). (C) 2002 Elsevier Science (USA).Article Citation Count: 9Carrier scattering mechanisms in GaS0.5Se0.5 layered crystals(Wiley-v C H verlag Gmbh, 2002) Qasrawı, Atef Fayez Hasan; Gasanly, NM; Department of Electrical & Electronics EngineeringSystematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.Article Citation Count: 11Cd-doping effects on the properties of polycrystalline α-In2Se3 thin films(2002) Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics EngineeringThe X-ray diffraction has revealed that the polycrystalline hexagonal structured α-In2Se3 thin films grown at substrate temperature of 200°C with the unit cell parameters a=4.03°A and c=19.23°A becomes polycrystalline hexagonal structured InSe with a unit cell parameters of a=4.00°A and c=16.63°A by Cd-doping. The analysis of the conductivity temperature dependence in the range 300-40 K revealed that the thermionic emission of charged carriers and the variable range hopping are the predominant conduction mechanism above and below 100 K, respectively. Hall measurements revealed that the mobility is limited by the scattering of charged carriers through the grain boundaries above 200 K and 120 K for the undoped and Cd-doped samples, respectively. The photocurrent (Iph) increases with increasing illumination intensity (F) and decreasing temperature up to a maximum temperature of ∼100 K, below which Iph is temperature invariant. It is found to have the monomolecular and bimolecular recombination characters at low and high illumination intensities, respectively. The Cd-doping increases the density of trapping states that changes the position of the dark Fermi level leading to the deviation from linearity in the dependence of Iph on F at low illumination intensities.Article Citation Count: 3Effect of magnetic field and γ irradiation on the properties of Tl-2212 superconducting tape(Wiley-v C H verlag Gmbh, 2002) Kayed, Tarek Said; Erhan, İnci; Mathematics; Department of Electrical & Electronics EngineeringThe critical temperature and critical current of Tl-2212 superconducting sample in the form of a tape have been studied near T-c under magnetic field and gamma irradiation. T-c decreases from 109 to 94 K with increase of magnetic field up to 300 mT. In 77-109 K range, J(c) decreases rapidly in low fields up to around 50 mT followed by a very slow decrease in J(c) up to 300 mT. T-c of the sample did not change up to 100 MR gamma dose and then started to decrease from 109 to 102 K with increase of gamma dose up to 800 MR, most of the change taking place in high doses. The critical currents of the sample decreased steadily with gamma irradiation up to 600 MR after which no further change was noticed.Article Citation Count: 12Carrier transport properties of InS single crystals(2002) Qasrawı, Atef Fayez Hasan; Gasanly,N.M.; Department of Electrical & Electronics EngineeringThe electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.Conference Object Citation Count: 12Vulnerability of groundwater to pollution from agricultural diffuse sources: A case study(IWA Publishing, 2002) Muhammetoǧlu,H.; Muhammetoǧlu,A.; Soyupak,S.Kumluca, near Antalya in Turkey, is an important plain with its intensive agricultural activities employing greenhouses. The chemical fertilizer application practices caused excessive increases of the nitrogen, phosphorus and salinity within groundwater. A study has been initiated to assess the present state of the groundwater pollution problem of Kumluca Plain. A total of nine measurement and sampling stations have been selected to represent different depths groundwater table, different types of agricultural activities and different soil types. The magnitudes of the parameters: temperature, salinity and conductivity, nitrate, nitrite, ammonia, orthophosphate and fecal coliform were determined for groundwater. Soil samples collected from the stations have been analyzed for several parameters such as texture, total salinity, total nitrogen, and total phosphorus. The measurement and analyses results of the groundwater showed wide spatial variations depending on factors such as the quality of irrigation water, depth groundwater, soil characteristics, type and age of agriculture and hydrology. Groundwater vulnerabilities to pollution have been analyzed using the SEEPAGE Model approach. Furthermore the soil, aquifer and groundwater characteristics, which will be utilized to establish "cause" and "effect" relationships in future, have been clarified.Conference Object Citation Count: 6Evaluation of efficiencies of diffuse allochthonous and autochthonous nutrient input control in restoration of a highly eutrophic lake(I W A Publishing, 2002) Muhammetoglu, A; Muhammetoglu, H; Soyupak, SMogan Lake is an important recreational area for Metropolitan Ankara-Turkey. It is a shallow eutrophic lake with a dense growth of macrophytes. The main contributors of nutrients and other pollutants to the lake are the creeks carrying the runoff water from the watershed and upland farming land, in addition to the domestic and industrial wastewater discharges from a nearby town and industries. Hydrodynamic and water quality modeling techniques were used to determine the optimum management schemes for the lake restoration and diffuse pollution control. Management scenarios were devised and tested to control allochthonous and autochthonous nutrient inputs to the lake. Phosphorus and nitrogen load reductions were the main test elements for the control of allochthonous nutrient inputs. The scenario analysis revealed that reduction of phosphorus and nitrogen loads from diffused sources will have a marginal effect on controlling eutrophication if macrophyte growth is left uncontrolled. Scenarios employing macrophyte harvesting and sediment dredging have been evaluated for autochthonous nutrient input control. Sediment dredging alone has been shown to yield the most favorable conditions for water quality improvement in Mogan Lake. Further, control of diffuse pollution was an essential final step to achieve an acceptable long-term sustainable water quality improvement in the lake.Article Citation Count: 127Convergence of generalized Bernstein polynomials(Academic Press inc Elsevier Science, 2002) Ostrovska, Sofiya; Ostrovska, S; MathematicsLet f is an element of C[0, 1], q is an element of (0, 1), and B-n(f, q; x) be generalized Bernstein polynomials based on the q-integers. These polynomials were introduced by G. M. Phillips in 1997. We study convergence properties of the sequence {B-n(f, q; x)}(n=1)(infinity). It is shown that in general these properties are essentially different from those in the classical case q = 1. (C) 2002 Elsevier Science (USA).Article Citation Count: 12Carrier transport properties of InS single crystals(2002) Qasrawı, Atef Fayez Hasan; Gasanly,N.M.; Department of Electrical & Electronics EngineeringThe electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.