Crystal data, photoconductivity and carrier scattering mechanisms in CuIn<sub>5</sub>S<sub>8</sub> single crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.contributor.authorQasrawi, AF
dc.contributor.authorGasanly, NM
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:09:00Z
dc.date.available2024-07-05T15:09:00Z
dc.date.issued2001
dc.departmentAtılım Universityen_US
dc.department-tempAtilim Univ, Fac Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractThe X-ray diffraction has revealed that CuIn5S8 is a single phase crystal of cubic spinet structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn5S8 crystals are measured in the temperature range of 50-400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of similar to1.35 eV at 0 K, a carrier effective mass of 0.2 m(0), an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.en_US
dc.identifier.citation19
dc.identifier.doi10.1002/1521-4079(200112)36:12<1399
dc.identifier.endpage1410en_US
dc.identifier.issn0232-1300
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-0035665782
dc.identifier.startpage1399en_US
dc.identifier.urihttps://doi.org/10.1002/1521-4079(200112)36:12<1399
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1132
dc.identifier.volume36en_US
dc.identifier.wosWOS:000173094600010
dc.identifier.wosqualityQ3
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherWiley-v C H verlag Gmbhen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCuIn5S8 crystalen_US
dc.subjectphotocurrenten_US
dc.subjectresistivityen_US
dc.subjectmobilityen_US
dc.subjectacousticen_US
dc.subjectpolaren_US
dc.subjectscattering mechanismen_US
dc.titleCrystal data, photoconductivity and carrier scattering mechanisms in CuIn<sub>5</sub>S<sub>8</sub> single crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections