Carrier scattering mechanisms in GaS<sub>0.5</sub>Se<sub>0.5</sub> layered crystals

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2002

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Wiley-v C H verlag Gmbh

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x10(17) and 4.1x10(17) cm(-1), respectively, and an electron effective mass of 0.41 m(o). The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Angstrom.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975
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Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo
Qasrawi, Atef Fayez ORCID logo

Keywords

GaS0.5Se0.5 crystals, resistivity, Hall mobility, scattering mechanisms

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Citation

9

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Q3

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Volume

37

Issue

6

Start Page

587

End Page

594

URI

https://doi.org/10.1002/1521-4079(200206)37:6<587
 https://hdl.handle.net/20.500.14411/1119

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