Crystal Data and Some Physical Properties of Tl<sub>2</Sub>ingate<sub>4< Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:33:09Z
dc.date.available 2024-07-05T14:33:09Z
dc.date.issued 2007
dc.department Atılım University en_US
dc.department-temp Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract The room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n-type conduction with an electrical resistivity, electron density and Hall mobility of 2.49x 10(3) Omega cm, 4.76x 10(12) cm(-3) and 527 cm V-2(-1) s(-1), respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 cV. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1002/crat.200710909
dc.identifier.endpage 811 en_US
dc.identifier.issn 0232-1300
dc.identifier.issue 8 en_US
dc.identifier.scopus 2-s2.0-34547791352
dc.identifier.startpage 807 en_US
dc.identifier.uri https://doi.org/10.1002/crat.200710909
dc.identifier.uri https://hdl.handle.net/20.500.14411/891
dc.identifier.volume 42 en_US
dc.identifier.wos WOS:000248667400010
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Wiley-v C H verlag Gmbh en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 3
dc.subject X-ray diffraction en_US
dc.subject resistivity en_US
dc.subject mobility en_US
dc.subject photoconductivity en_US
dc.subject electronic transport en_US
dc.title Crystal Data and Some Physical Properties of Tl<sub>2</Sub>ingate<sub>4< Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 2
dspace.entity.type Publication
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relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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