Crystal data and some physical properties of Tl<sub>2</sub>InGaTe<sub>4</sub> crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:33:09Z
dc.date.available2024-07-05T14:33:09Z
dc.date.issued2007
dc.departmentAtılım Universityen_US
dc.department-tempAtilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractThe room temperature crystal data, Debye temperature, dark and photoelectrical properties of the Bridgman method grown Tl2InGaTe4 crystals are reported for the first time. The X-ray diffraction technique has revealed that Tl(2)lnGaTe(4) is a single phase crystal of tetragonal body-centered structure belonging to the D-4H(18) - I4mcm space group. A Debye temperature of 124 K is calculated from the results of the X-ray data. The current-voltage measurements have shown the existence of the switching property of the crystals at a critical voltage of 80 V. The dark electrical resistivity and Hall effect measurements indicated the n-type conduction with an electrical resistivity, electron density and Hall mobility of 2.49x 10(3) Omega cm, 4.76x 10(12) cm(-3) and 527 cm V-2(-1) s(-1), respectively. The photosensitivity measurements on the crystal revealed that, the variation of photocurrent with illumination intensity is linear, indicating the domination of monomolecular recombination at room temperature. Moreover, the spectral distribution of the photocurrent allowed the determination of the energy band gap of the crystal studied as 0.88 cV.en_US
dc.identifier.citation2
dc.identifier.doi10.1002/crat.200710909
dc.identifier.endpage811en_US
dc.identifier.issn0232-1300
dc.identifier.issue8en_US
dc.identifier.scopus2-s2.0-34547791352
dc.identifier.startpage807en_US
dc.identifier.urihttps://doi.org/10.1002/crat.200710909
dc.identifier.urihttps://hdl.handle.net/20.500.14411/891
dc.identifier.volume42en_US
dc.identifier.wosWOS:000248667400010
dc.identifier.wosqualityQ3
dc.language.isoenen_US
dc.publisherWiley-v C H verlag Gmbhen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectX-ray diffractionen_US
dc.subjectresistivityen_US
dc.subjectmobilityen_US
dc.subjectphotoconductivityen_US
dc.subjectelectronic transporten_US
dc.titleCrystal data and some physical properties of Tl<sub>2</sub>InGaTe<sub>4</sub> crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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