Temperature Effect on Dark Electrical Conductivity, Hall Coefficient, Space Charge Limited Current and Photoconductivity of Tlgas<sub>2</Sub> Single Crystals
| dc.contributor.author | Qasrawi, AF | |
| dc.contributor.author | Gasanly, NM | |
| dc.date.accessioned | 2024-07-05T15:10:07Z | |
| dc.date.available | 2024-07-05T15:10:07Z | |
| dc.date.issued | 2005 | |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
| dc.description.abstract | The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conductivity exhibits activation behaviour with activation energies (0.360 +/- 0.005) eV and (0.240 +/- 0.005) eV at high and low temperatures, respectively. The space charge limited current analysis has shown that the energy level of (0.240 +/- 0.005) eV is a trapping state with trap density of (2.2-3.9) x 10(12) cm(-3). The data analysis of the photocurrent-temperature dependence has revealed two photoconductivity activation energies of (0.660 +/- 0.005) eV and (0.360 +/- 0.005) eV in the temperature regions of 290-350 K and 220-280 K, respectively. The illumination dependence of photoconductivity is found to exhibit linear and supralinear recombination mechanisms above and below 290 K, respectively. | en_US |
| dc.identifier.doi | 10.1088/0268-1242/20/5/021 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.issn | 1361-6641 | |
| dc.identifier.scopus | 2-s2.0-24144432261 | |
| dc.identifier.uri | https://doi.org/10.1088/0268-1242/20/5/021 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/1258 | |
| dc.language.iso | en | en_US |
| dc.publisher | Iop Publishing Ltd | en_US |
| dc.relation.ispartof | Semiconductor Science and Technology | |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | [No Keyword Available] | en_US |
| dc.title | Temperature Effect on Dark Electrical Conductivity, Hall Coefficient, Space Charge Limited Current and Photoconductivity of Tlgas<sub>2</Sub> Single Crystals | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.scopusid | 6603962677 | |
| gdc.author.scopusid | 35580905900 | |
| gdc.author.wosid | Gasanly, Nizami/HRE-1447-2023 | |
| gdc.author.wosid | Qasrawi, Atef Fayez/R-4409-2019 | |
| gdc.author.wosid | Gasanly, Nizami/ABA-2249-2020 | |
| gdc.bip.impulseclass | C4 | |
| gdc.bip.influenceclass | C4 | |
| gdc.bip.popularityclass | C5 | |
| gdc.coar.access | metadata only access | |
| gdc.coar.type | text::journal::journal article | |
| gdc.collaboration.industrial | false | |
| gdc.description.department | Atılım University | en_US |
| gdc.description.departmenttemp | Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
| gdc.description.endpage | 452 | en_US |
| gdc.description.issue | 5 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.scopusquality | Q2 | |
| gdc.description.startpage | 446 | en_US |
| gdc.description.volume | 20 | en_US |
| gdc.description.wosquality | Q3 | |
| gdc.identifier.openalex | W2053237653 | |
| gdc.identifier.wos | WOS:000229797900024 | |
| gdc.index.type | WoS | |
| gdc.index.type | Scopus | |
| gdc.oaire.diamondjournal | false | |
| gdc.oaire.impulse | 5.0 | |
| gdc.oaire.influence | 3.9330637E-9 | |
| gdc.oaire.isgreen | false | |
| gdc.oaire.popularity | 2.3364999E-9 | |
| gdc.oaire.publicfunded | false | |
| gdc.oaire.sciencefields | 0103 physical sciences | |
| gdc.oaire.sciencefields | 02 engineering and technology | |
| gdc.oaire.sciencefields | 0210 nano-technology | |
| gdc.oaire.sciencefields | 01 natural sciences | |
| gdc.openalex.collaboration | National | |
| gdc.openalex.fwci | 1.16569063 | |
| gdc.openalex.normalizedpercentile | 0.77 | |
| gdc.opencitations.count | 19 | |
| gdc.plumx.crossrefcites | 19 | |
| gdc.plumx.mendeley | 12 | |
| gdc.plumx.scopuscites | 25 | |
| gdc.scopus.citedcount | 25 | |
| gdc.virtual.author | Qasrawı, Atef Fayez Hasan | |
| gdc.wos.citedcount | 25 | |
| relation.isAuthorOfPublication | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
| relation.isOrgUnitOfPublication | c3c9b34a-b165-4cd6-8959-dc25e91e206b | |
| relation.isOrgUnitOfPublication | dff2e5a6-d02d-4bef-8b9e-efebe3919b10 | |
| relation.isOrgUnitOfPublication | 50be38c5-40c4-4d5f-b8e6-463e9514c6dd | |
| relation.isOrgUnitOfPublication.latestForDiscovery | c3c9b34a-b165-4cd6-8959-dc25e91e206b |
