Multiphonon Absorption Processes in Layered Structured Tlgas<sub>2</Sub>, Tlins<sub>2</Sub> and Tlgase<sub>2</Sub> Single Crystals
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Date
2013
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier Science Bv
Open Access Color
Green Open Access
No
OpenAIRE Downloads
OpenAIRE Views
Publicly Funded
No
Abstract
The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.
Description
Gasanly, Nizami/0000-0002-3199-6686; Korkmaz, Filiz/0000-0003-3512-3521; Gasanly, Nizami/0000-0002-3199-6686
Keywords
Semiconductors, Chalcogenides, Optical properties, Raman scattering
Fields of Science
0103 physical sciences, 02 engineering and technology, 0210 nano-technology, 01 natural sciences
Citation
WoS Q
Q2
Scopus Q

OpenCitations Citation Count
7
Source
Physica B: Condensed Matter
Volume
421
Issue
Start Page
50
End Page
52
PlumX Metrics
Citations
CrossRef : 3
Scopus : 8
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Mendeley Readers : 8
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