Multiphonon absorption processes in layered structured TlGaS<sub>2</sub>, TlInS<sub>2</sub> and TlGaSe<sub>2</sub> single crystals

No Thumbnail Available

Date

2013

Authors

Işık, Mehmet
Gasanly, N. M.
Korkmaz, F.

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier Science Bv

Open Access Color

OpenAIRE Downloads

OpenAIRE Views

Research Projects

Organizational Units

Thumbnail Image
Organizational Unit
Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

Journal Issue

Abstract

The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.

Description

Gasanly, Nizami/0000-0002-3199-6686; Korkmaz, Filiz/0000-0003-3512-3521; Gasanly, Nizami/0000-0002-3199-6686
ORCID
Gasanly, Nizami ORCID logo
Korkmaz, Filiz ORCID logo
Gasanly, Nizami ORCID logo

Keywords

Semiconductors, Chalcogenides, Optical properties, Raman scattering

Turkish CoHE Thesis Center URL

Fields of Science

Citation

10

WoS Q

Scopus Q

Source

Volume

421

Issue

Start Page

50

End Page

52

URI

https://doi.org/10.1016/j.physb.2013.03.046
 https://hdl.handle.net/20.500.14411/380

Collections

WOS
Scopus