Multiphonon absorption processes in layered structured TlGaS<sub>2</sub>, TlInS<sub>2</sub> and TlGaSe<sub>2</sub> single crystals

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Date

2013

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Elsevier Science Bv

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.

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Gasanly, Nizami/0000-0002-3199-6686; Korkmaz, Filiz/0000-0003-3512-3521; Gasanly, Nizami/0000-0002-3199-6686

Keywords

Semiconductors, Chalcogenides, Optical properties, Raman scattering

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10

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Volume

421

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Start Page

50

End Page

52

URI

https://doi.org/10.1016/j.physb.2013.03.046
 https://hdl.handle.net/20.500.14411/380

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