Multiphonon absorption processes in layered structured TlGaS<sub>2</sub>, TlInS<sub>2</sub> and TlGaSe<sub>2</sub> single crystals

Simple item page
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridKorkmaz, Filiz/0000-0003-3512-3521
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorscopusid8664101000
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidKorkmaz, Filiz/GOH-1457-2022
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, N. M.
dc.contributor.authorKorkmaz, F.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:28:25Z
dc.date.available2024-07-05T14:28:25Z
dc.date.issued2013
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.; Korkmaz, F.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Korkmaz, Filiz/0000-0003-3512-3521; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractThe infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2 layered single crystals grown by Bridgman method were studied in the frequency ranges of 400-1500 and 10-400 cm(-1), respectively. Three, three and five bands observed at room temperature in IR transmittance spectra of TlGaS2, TlInS2 and TlGaSe2, respectively, were interpreted in terms of multiphonon absorption processes. (C) 2013 Elsevier By. All rights reserved.en_US
dc.description.sponsorshipAtilim University [ATU-ALP-1011-01]en_US
dc.description.sponsorshipThis work was partially funded by Atilim University (ATU-ALP-1011-01).en_US
dc.identifier.citation10
dc.identifier.doi10.1016/j.physb.2013.03.046
dc.identifier.endpage52en_US
dc.identifier.issn0921-4526
dc.identifier.scopus2-s2.0-84877955767
dc.identifier.startpage50en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2013.03.046
dc.identifier.urihttps://hdl.handle.net/20.500.14411/380
dc.identifier.volume421en_US
dc.identifier.wosWOS:000319262400010
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectChalcogenidesen_US
dc.subjectOptical propertiesen_US
dc.subjectRaman scatteringen_US
dc.titleMultiphonon absorption processes in layered structured TlGaS<sub>2</sub>, TlInS<sub>2</sub> and TlGaSe<sub>2</sub> single crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication0493a5b0-644f-4893-9f39-87538d8d6709
relation.isAuthorOfPublication.latestForDiscovery0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections

WOS
Scopus