Determination of optical parameters of Ga0.75In0.25Se layered crystals

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Date

2012

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Wiley-v C H verlag Gmbh

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zero value of the band gap (Egi(0) = 2.01 eV) were reported. The wavelength dependence of the refractive index was analyzed using Wemple and DiDomenico, Sellmeier and Cauchy models to find the oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index values. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Description

Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266

Keywords

semiconductors, chalcogenides, optical properties

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Citation

8

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Volume

47

Issue

5

Start Page

530

End Page

534

URI

https://doi.org/10.1002/crat.201100643
 https://hdl.handle.net/20.500.14411/1395

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