Determination of optical parameters of Ga0.75In0.25Se layered crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:11:02Z
dc.date.available2024-07-05T15:11:02Z
dc.date.issued2012
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266en_US
dc.description.abstractThe optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zero value of the band gap (Egi(0) = 2.01 eV) were reported. The wavelength dependence of the refractive index was analyzed using Wemple and DiDomenico, Sellmeier and Cauchy models to find the oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index values. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)en_US
dc.identifier.citation8
dc.identifier.doi10.1002/crat.201100643
dc.identifier.endpage534en_US
dc.identifier.issn0232-1300
dc.identifier.issue5en_US
dc.identifier.scopus2-s2.0-84860679615
dc.identifier.startpage530en_US
dc.identifier.urihttps://doi.org/10.1002/crat.201100643
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1395
dc.identifier.volume47en_US
dc.identifier.wosWOS:000303601400009
dc.identifier.wosqualityQ3
dc.language.isoenen_US
dc.publisherWiley-v C H verlag Gmbhen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectsemiconductorsen_US
dc.subjectchalcogenidesen_US
dc.subjectoptical propertiesen_US
dc.titleDetermination of optical parameters of Ga0.75In0.25Se layered crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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