Determination of optical parameters of Ga0.75In0.25Se layered crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:11:02Z
dc.date.available 2024-07-05T15:11:02Z
dc.date.issued 2012
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract The optical properties of the Ga0.75In0.25Se crystals have been investigated by means of transmission and reflection measurements in the wavelength range of 380-1100 nm. The analysis of the results performed at room temperature revealed the presence of optical indirect transtions with band gap energy of 1.89 eV. The variation of the band gap energy as a function of temperature was also studied in the temperature range of 10-300 K. The rate of change of band gap energy (? = 6.2 x 10(4) eV/K) and absolute zero value of the band gap (Egi(0) = 2.01 eV) were reported. The wavelength dependence of the refractive index was analyzed using Wemple and DiDomenico, Sellmeier and Cauchy models to find the oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index values. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) en_US
dc.identifier.citationcount 8
dc.identifier.doi 10.1002/crat.201100643
dc.identifier.endpage 534 en_US
dc.identifier.issn 0232-1300
dc.identifier.issue 5 en_US
dc.identifier.scopus 2-s2.0-84860679615
dc.identifier.startpage 530 en_US
dc.identifier.uri https://doi.org/10.1002/crat.201100643
dc.identifier.uri https://hdl.handle.net/20.500.14411/1395
dc.identifier.volume 47 en_US
dc.identifier.wos WOS:000303601400009
dc.identifier.wosquality Q3
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Wiley-v C H verlag Gmbh en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 8
dc.subject semiconductors en_US
dc.subject chalcogenides en_US
dc.subject optical properties en_US
dc.title Determination of optical parameters of Ga0.75In0.25Se layered crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 8
dspace.entity.type Publication
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