Thermoluminescence characteristics of Tl<sub>4</sub>GaIn<sub>3</sub>S<sub>8</sub> layered single crystals
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Date
2014
Authors
Işık, Mehmet
Isik, M.
Gasanly, N. M.
Journal Title
Journal ISSN
Volume Title
Publisher
Taylor & Francis Ltd
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Abstract
The properties of trapping centres in - as grown - Tl4GaIn3S8 layered single crystals were investigated in the temperature range of 10-300K using thermoluminescence (TL) measurements. TL curve was analysed to characterize the defects responsible for the observed peaks. Thermal activation energies of the trapping centres were determined using various methods: curve fitting, initial rise and peak shape methods. The results indicated that the peak observed in the low-temperature region composed of many overlapped peaks corresponding to distributed trapping centres in the crystal structure. The apparent thermal energies of the distributed traps were observed to be shifted from similar to 12 to similar to 125meV by increasing the illumination temperature from 10 to 36K. The analysis revealed that the first-order kinetics (slow retrapping) obeys for deeper level located at 292meV.
Description
Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Delice, Serdar/0000-0001-5409-6528
Keywords
defects, semiconductors, crystals
Turkish CoHE Thesis Center URL
Fields of Science
Citation
2
WoS Q
Q3
Scopus Q
Q3
Source
Volume
94
Issue
2
Start Page
141
End Page
151