Thermoluminescence Characteristics of Tl<sub>4</Sub>gain<sub>3< Layered Single Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Delice, Serdar/0000-0001-5409-6528
dc.authorscopusid 55751932500
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Delice, Serdar/AAF-2712-2019
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Delice, Serdar/AAU-4793-2020
dc.contributor.author Delice, S.
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:26:00Z
dc.date.available 2024-07-05T14:26:00Z
dc.date.issued 2014
dc.department Atılım University en_US
dc.department-temp [Delice, S.; Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Delice, Serdar/0000-0001-5409-6528 en_US
dc.description.abstract The properties of trapping centres in - as grown - Tl4GaIn3S8 layered single crystals were investigated in the temperature range of 10-300K using thermoluminescence (TL) measurements. TL curve was analysed to characterize the defects responsible for the observed peaks. Thermal activation energies of the trapping centres were determined using various methods: curve fitting, initial rise and peak shape methods. The results indicated that the peak observed in the low-temperature region composed of many overlapped peaks corresponding to distributed trapping centres in the crystal structure. The apparent thermal energies of the distributed traps were observed to be shifted from similar to 12 to similar to 125meV by increasing the illumination temperature from 10 to 36K. The analysis revealed that the first-order kinetics (slow retrapping) obeys for deeper level located at 292meV. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1080/14786435.2013.848303
dc.identifier.endpage 151 en_US
dc.identifier.issn 1478-6435
dc.identifier.issn 1478-6443
dc.identifier.issue 2 en_US
dc.identifier.scopus 2-s2.0-84891835990
dc.identifier.scopusquality Q3
dc.identifier.startpage 141 en_US
dc.identifier.uri https://doi.org/10.1080/14786435.2013.848303
dc.identifier.uri https://hdl.handle.net/20.500.14411/82
dc.identifier.volume 94 en_US
dc.identifier.wos WOS:000329154900003
dc.identifier.wosquality Q3
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Taylor & Francis Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 2
dc.subject defects en_US
dc.subject semiconductors en_US
dc.subject crystals en_US
dc.title Thermoluminescence Characteristics of Tl<sub>4</Sub>gain<sub>3< Layered Single Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 2
dspace.entity.type Publication
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