Design and Characterization of the Ge/Ga<sub>2< Heterojunction

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Al Garni, Sabah/0000-0002-4995-8231
dc.authorscopusid 36909456400
dc.authorscopusid 6603962677
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Al Garni, Sabah/E-1423-2013
dc.contributor.author Al Garni, S. E.
dc.contributor.author Qasrawi, A. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:29:05Z
dc.date.available 2024-07-05T15:29:05Z
dc.date.issued 2017
dc.department Atılım University en_US
dc.department-temp [Al Garni, S. E.] King Abdulaziz Univ, Fac Sci Al Faisaliah, Dept Phys, Jeddah, Saudi Arabia; [Qasrawi, A. F.] AAUJ, Dept Phys, Jenin, Turkey; [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; Al Garni, Sabah/0000-0002-4995-8231 en_US
dc.description.abstract In this work, the formation and properties of Ga2S3 thin films deposited onto polycrystalline Ge substrates are studied by means of scanning electron microscopy, energy dispersive x-ray analyzer, Raman spectroscopy, x-ray diffraction techniques, ultraviolet-visible light spectrophotometry in the range of 300-1100 nm and by ac signal power spectroscopy in the range of 0.2-3.0 GHz. The first four techniques allowed the determining of the stoichiometry, the vibrational frequencies, the lattice parameters, the plane orientations, the strain and the defect density for the interface. In addition, it was observed that the Ge/Ga2S3 interface exhibited conduction and valence band offsets of 0.83 eV and 0.82 eV, respectively, and the real part of the dielectric spectra experimentally exhibited four resonance peaks centered at frequencies above 357 THz. Moreover, the computational analysis of the imaginary part of the dielectric constant via the Drude-Lorentz model has shown that the interface wave filtering properties are controlled by the electron-plasmon coupling with plasma frequencies in the range of 1.33-2.30 GHz. The drift mobility of electrons in this range was found to be 15.61 cm(2)/Vs. The real ability of the interface to control wave propagation was confirmed with ac signals propagating tests. The plasmonic features of the interface nominate it for use in microwave cavities and as wireless terahertz receivers. en_US
dc.description.sponsorship Deanship of Scientific Research (DSR), at King Abdulaziz University, Jaddah [G-229-363-37]; DSR en_US
dc.description.sponsorship This project was funded by the Deanship of Scientific Research (DSR), at King Abdulaziz University, Jaddah, under the Grant Number G-229-363-37. The authors, therefore, acknowledge with thanks the DSR technical and financial support. en_US
dc.identifier.citationcount 14
dc.identifier.doi 10.1007/s11664-017-5462-4
dc.identifier.endpage 4856 en_US
dc.identifier.issn 0361-5235
dc.identifier.issn 1543-186X
dc.identifier.issue 8 en_US
dc.identifier.scopus 2-s2.0-85016475242
dc.identifier.startpage 4848 en_US
dc.identifier.uri https://doi.org/10.1007/s11664-017-5462-4
dc.identifier.uri https://hdl.handle.net/20.500.14411/2854
dc.identifier.volume 46 en_US
dc.identifier.wos WOS:000404530900020
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 14
dc.subject Ge substrate en_US
dc.subject Ga2S3 en_US
dc.subject p-n junction en_US
dc.subject terahertz en_US
dc.subject plasmon devices en_US
dc.title Design and Characterization of the Ge/Ga<sub>2< Heterojunction en_US
dc.type Article en_US
dc.wos.citedbyCount 15
dspace.entity.type Publication
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