Crystal Data and Indirect Optical Transitions in Tl<sub>2</Sub>ingase<sub>4< Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:08:35Z
dc.date.available 2024-07-05T15:08:35Z
dc.date.issued 2008
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975 en_US
dc.description.abstract The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved. en_US
dc.identifier.citationcount 4
dc.identifier.doi 10.1016/j.materresbull.2007.06.025
dc.identifier.endpage 1501 en_US
dc.identifier.issn 0025-5408
dc.identifier.issue 6 en_US
dc.identifier.scopus 2-s2.0-41349084568
dc.identifier.startpage 1497 en_US
dc.identifier.uri https://doi.org/10.1016/j.materresbull.2007.06.025
dc.identifier.uri https://hdl.handle.net/20.500.14411/1051
dc.identifier.volume 43 en_US
dc.identifier.wos WOS:000255565000020
dc.identifier.wosquality Q2
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Pergamon-elsevier Science Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 4
dc.subject semiconductors en_US
dc.subject crystal growth en_US
dc.subject X-ray diffraction en_US
dc.subject optical properties en_US
dc.title Crystal Data and Indirect Optical Transitions in Tl<sub>2</Sub>ingase<sub>4< Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 4
dspace.entity.type Publication
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relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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