Crystal data and indirect optical transitions in Tl<sub>2</sub>InGaSe<sub>4</sub> crystals
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorscopusid | 6603962677 | |
dc.authorscopusid | 35580905900 | |
dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
dc.contributor.author | Gasanly, N. M. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:08:35Z | |
dc.date.available | 2024-07-05T15:08:35Z | |
dc.date.issued | 2008 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Qasrawi, A. F.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
dc.description | Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975 | en_US |
dc.description.abstract | The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved. | en_US |
dc.identifier.citation | 4 | |
dc.identifier.doi | 10.1016/j.materresbull.2007.06.025 | |
dc.identifier.endpage | 1501 | en_US |
dc.identifier.issn | 0025-5408 | |
dc.identifier.issue | 6 | en_US |
dc.identifier.scopus | 2-s2.0-41349084568 | |
dc.identifier.startpage | 1497 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.materresbull.2007.06.025 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/1051 | |
dc.identifier.volume | 43 | en_US |
dc.identifier.wos | WOS:000255565000020 | |
dc.identifier.wosquality | Q2 | |
dc.language.iso | en | en_US |
dc.publisher | Pergamon-elsevier Science Ltd | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | semiconductors | en_US |
dc.subject | crystal growth | en_US |
dc.subject | X-ray diffraction | en_US |
dc.subject | optical properties | en_US |
dc.title | Crystal data and indirect optical transitions in Tl<sub>2</sub>InGaSe<sub>4</sub> crystals | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
relation.isAuthorOfPublication.latestForDiscovery | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
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