Crystal data and indirect optical transitions in Tl<sub>2</sub>InGaSe<sub>4</sub> crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:08:35Z
dc.date.available2024-07-05T15:08:35Z
dc.date.issued2008
dc.departmentAtılım Universityen_US
dc.department-temp[Qasrawi, A. F.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975en_US
dc.description.abstractThe room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citation4
dc.identifier.doi10.1016/j.materresbull.2007.06.025
dc.identifier.endpage1501en_US
dc.identifier.issn0025-5408
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-41349084568
dc.identifier.startpage1497en_US
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2007.06.025
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1051
dc.identifier.volume43en_US
dc.identifier.wosWOS:000255565000020
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherPergamon-elsevier Science Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectsemiconductorsen_US
dc.subjectcrystal growthen_US
dc.subjectX-ray diffractionen_US
dc.subjectoptical propertiesen_US
dc.titleCrystal data and indirect optical transitions in Tl<sub>2</sub>InGaSe<sub>4</sub> crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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