Crystal Data and Indirect Optical Transitions in Tl<sub>2</Sub>ingase<sub>4< Crystals
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Date
2008
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Pergamon-elsevier Science Ltd
Open Access Color
Green Open Access
No
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Publicly Funded
No
Abstract
The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved.
Description
Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975
Keywords
semiconductors, crystal growth, X-ray diffraction, optical properties
Fields of Science
0103 physical sciences, 02 engineering and technology, 0210 nano-technology, 01 natural sciences
Citation
WoS Q
Q2
Scopus Q

OpenCitations Citation Count
4
Source
Materials Research Bulletin
Volume
43
Issue
6
Start Page
1497
End Page
1501
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CrossRef : 4
Scopus : 4
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