Crystal Data and Indirect Optical Transitions in Tl<sub>2</Sub>ingase<sub>4< Crystals
No Thumbnail Available
Date
2008
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Pergamon-elsevier Science Ltd
Open Access Color
OpenAIRE Downloads
OpenAIRE Views
Abstract
The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved.
Description
Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975
Keywords
semiconductors, crystal growth, X-ray diffraction, optical properties
Turkish CoHE Thesis Center URL
Fields of Science
Citation
WoS Q
Q2
Scopus Q
Source
Volume
43
Issue
6
Start Page
1497
End Page
1501