Thermally Stimulated Current Measurements in Undoped Ga<sub>3</Sub>inse<sub>4< Single Crystals
| dc.contributor.author | Isik, M. | |
| dc.contributor.author | Işık, Mehmet | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.author | Işık, Mehmet | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.contributor.other | 15. Graduate School of Natural and Applied Sciences | |
| dc.contributor.other | 01. Atılım University | |
| dc.date.accessioned | 2024-07-05T15:10:27Z | |
| dc.date.available | 2024-07-05T15:10:27Z | |
| dc.date.issued | 2011 | |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 | en_US |
| dc.description.abstract | The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonable results under the model that assumes slow retrapping. The capture cross-section of the trap was determined as 1.0 x 10(-25) cm(2) with concentration of 1.4 x 10(17) cm(-3). (C) 2011 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jpcs.2011.03.008 | |
| dc.identifier.issn | 0022-3697 | |
| dc.identifier.scopus | 2-s2.0-79956074080 | |
| dc.identifier.uri | https://doi.org/10.1016/j.jpcs.2011.03.008 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/1324 | |
| dc.language.iso | en | en_US |
| dc.publisher | Pergamon-elsevier Science Ltd | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Chalcogenides | en_US |
| dc.subject | Defects | en_US |
| dc.subject | Electrical properties | en_US |
| dc.title | Thermally Stimulated Current Measurements in Undoped Ga<sub>3</Sub>inse<sub>4< Single Crystals | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | Isik, Mehmet/0000-0003-2119-8266 | |
| gdc.author.institutional | Işık, Mehmet | |
| gdc.author.scopusid | 23766993100 | |
| gdc.author.scopusid | 35580905900 | |
| gdc.author.wosid | Gasanly, Nizami/HRE-1447-2023 | |
| gdc.author.wosid | Gasanly, Nizami/ABA-2249-2020 | |
| gdc.coar.access | metadata only access | |
| gdc.coar.type | text::journal::journal article | |
| gdc.description.department | Atılım University | en_US |
| gdc.description.departmenttemp | [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
| gdc.description.endpage | 772 | en_US |
| gdc.description.issue | 6 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.startpage | 768 | en_US |
| gdc.description.volume | 72 | en_US |
| gdc.description.wosquality | Q2 | |
| gdc.identifier.openalex | W2000534456 | |
| gdc.identifier.wos | WOS:000291915300029 | |
| gdc.openalex.fwci | 1.307 | |
| gdc.openalex.normalizedpercentile | 0.46 | |
| gdc.opencitations.count | 9 | |
| gdc.plumx.crossrefcites | 9 | |
| gdc.plumx.mendeley | 4 | |
| gdc.plumx.scopuscites | 9 | |
| gdc.scopus.citedcount | 9 | |
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