Thermally Stimulated Current Measurements in Undoped Ga<sub>3</Sub>inse<sub>4< Single Crystals

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2011

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Pergamon-elsevier Science Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonable results under the model that assumes slow retrapping. The capture cross-section of the trap was determined as 1.0 x 10(-25) cm(2) with concentration of 1.4 x 10(17) cm(-3). (C) 2011 Elsevier Ltd. All rights reserved.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266
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Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo
Isik, Mehmet ORCID logo

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Semiconductors, Chalcogenides, Defects, Electrical properties

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Volume

72

Issue

6

Start Page

768

End Page

772

URI

https://doi.org/10.1016/j.jpcs.2011.03.008
 https://hdl.handle.net/20.500.14411/1324

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