Structural, Electrical and Anisotropic Properties of Tl<sub>4</Sub>se<sub>3< Chain Crystals
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Date
2009
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Pergamon-elsevier Science Ltd
Open Access Color
Green Open Access
No
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Publicly Funded
No
Abstract
The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.
Description
Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686
Keywords
Semiconductors, Crystal growth, X-ray technique, Electrical properties
Turkish CoHE Thesis Center URL
Fields of Science
0103 physical sciences, 02 engineering and technology, 0210 nano-technology, 01 natural sciences
Citation
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OpenCitations Citation Count
2
Source
Materials Research Bulletin
Volume
44
Issue
10
Start Page
2009
End Page
2013
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CrossRef : 2
Scopus : 2
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Mendeley Readers : 3
SCOPUS™ Citations
2
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Web of Science™ Citations
2
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2
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