Structural, Electrical and Anisotropic Properties of Tl<sub>4</Sub>se<sub>3< Chain Crystals
| dc.contributor.author | Qasrawi, A. F. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.date.accessioned | 2024-07-05T15:12:05Z | |
| dc.date.available | 2024-07-05T15:12:05Z | |
| dc.date.issued | 2009 | |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
| dc.description.abstract | The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.materresbull.2009.06.004 | |
| dc.identifier.issn | 0025-5408 | |
| dc.identifier.scopus | 2-s2.0-68949196317 | |
| dc.identifier.uri | https://doi.org/10.1016/j.materresbull.2009.06.004 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/1535 | |
| dc.language.iso | en | en_US |
| dc.publisher | Pergamon-elsevier Science Ltd | en_US |
| dc.relation.ispartof | Materials Research Bulletin | |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Crystal growth | en_US |
| dc.subject | X-ray technique | en_US |
| dc.subject | Electrical properties | en_US |
| dc.title | Structural, Electrical and Anisotropic Properties of Tl<sub>4</Sub>se<sub>3< Chain Crystals | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.scopusid | 6603962677 | |
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| gdc.author.wosid | Gasanly, Nizami/HRE-1447-2023 | |
| gdc.author.wosid | Qasrawi, Atef Fayez/R-4409-2019 | |
| gdc.author.wosid | Gasanly, Nizami/ABA-2249-2020 | |
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| gdc.description.department | Atılım University | en_US |
| gdc.description.departmenttemp | [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, West Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
| gdc.description.endpage | 2013 | en_US |
| gdc.description.issue | 10 | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| gdc.description.startpage | 2009 | en_US |
| gdc.description.volume | 44 | en_US |
| gdc.description.wosquality | Q2 | |
| gdc.identifier.openalex | W2087462317 | |
| gdc.identifier.wos | WOS:000270124400015 | |
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| gdc.virtual.author | Qasrawı, Atef Fayez Hasan | |
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