Structural, Electrical and Anisotropic Properties of Tl<sub>4</Sub>se<sub>3< Chain Crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:12:05Z
dc.date.available2024-07-05T15:12:05Z
dc.date.issued2009
dc.departmentAtılım Universityen_US
dc.department-temp[Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, West Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractThe structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citationcount2
dc.identifier.doi10.1016/j.materresbull.2009.06.004
dc.identifier.endpage2013en_US
dc.identifier.issn0025-5408
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-68949196317
dc.identifier.startpage2009en_US
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2009.06.004
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1535
dc.identifier.volume44en_US
dc.identifier.wosWOS:000270124400015
dc.identifier.wosqualityQ2
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherPergamon-elsevier Science Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount2
dc.subjectSemiconductorsen_US
dc.subjectCrystal growthen_US
dc.subjectX-ray techniqueen_US
dc.subjectElectrical propertiesen_US
dc.titleStructural, Electrical and Anisotropic Properties of Tl<sub>4</Sub>se<sub>3< Chain Crystalsen_US
dc.typeArticleen_US
dc.wos.citedbyCount2
dspace.entity.typePublication
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