Structural and Optical Properties of Ga<sub>2</Sub>se<sub>3< Crystals by Spectroscopic Ellipsometry
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorid | Babayeva, Rena Fikret/0000-0002-3170-0689 | |
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorscopusid | 55445682700 | |
dc.authorscopusid | 23766993100 | |
dc.authorscopusid | 35580905900 | |
dc.authorscopusid | 57189359213 | |
dc.authorscopusid | 6603642141 | |
dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
dc.authorwosid | Babayeva, Rena Fikret/AHB-0644-2022 | |
dc.authorwosid | Babayeva, Rena Fikret/ITU-6211-2023 | |
dc.authorwosid | Isik, Mehmet/KMY-5305-2024 | |
dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
dc.contributor.author | Guler, I. | |
dc.contributor.author | Isik, M. | |
dc.contributor.author | Gasanly, N. M. | |
dc.contributor.author | Gasanova, L. G. | |
dc.contributor.author | Babayeva, R. F. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:40:47Z | |
dc.date.available | 2024-07-05T15:40:47Z | |
dc.date.issued | 2019 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Guler, I.] Cankaya Univ, Intercurricular Courses Dept, Phys, TR-06790 Ankara, Turkey; [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanova, L. G.] Baku State Univ, Dept Phys, Baku 1148, Azerbaijan; [Babayeva, R. F.] Azerbaijan State Univ Econ, Dept Phys & Chem, Baku 1001, Azerbaijan | en_US |
dc.description | Gasanly, Nizami/0000-0002-3199-6686; Babayeva, Rena Fikret/0000-0002-3170-0689; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
dc.description.abstract | Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work. | en_US |
dc.identifier.citationcount | 12 | |
dc.identifier.doi | 10.1007/s11664-019-07000-4 | |
dc.identifier.endpage | 2422 | en_US |
dc.identifier.issn | 0361-5235 | |
dc.identifier.issn | 1543-186X | |
dc.identifier.issue | 4 | en_US |
dc.identifier.scopus | 2-s2.0-85061192215 | |
dc.identifier.startpage | 2418 | en_US |
dc.identifier.uri | https://doi.org/10.1007/s11664-019-07000-4 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/3362 | |
dc.identifier.volume | 48 | en_US |
dc.identifier.wos | WOS:000460453100083 | |
dc.identifier.wosquality | Q3 | |
dc.institutionauthor | Işık, Mehmet | |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.scopus.citedbyCount | 14 | |
dc.subject | Semiconductors | en_US |
dc.subject | optical properties | en_US |
dc.subject | optical constants | en_US |
dc.subject | critical points | en_US |
dc.title | Structural and Optical Properties of Ga<sub>2</Sub>se<sub>3< Crystals by Spectroscopic Ellipsometry | en_US |
dc.type | Article | en_US |
dc.wos.citedbyCount | 13 | |
dspace.entity.type | Publication | |
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