Structural and Optical Properties of Interfacial Inse Thin Film

Abstract

This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using characterization techniques including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy while the UV-vis spectrophotometry method was used in the spectral range between 500 and 1000 nm to examine the optical characteristics. Thus, the UV-vis spectroscopic data were used to extract several optical parameters including extinction coefficient (k), optical band gap (E-g), refractive index (n), absorption coefficient (alpha), and optical conductivity (sigma(opt)). The optical transition of InSe was found as a direct transition. However, the optical analysis of this study has revealed that the InSe film has the potential to be used in various optoelectronic and photovoltaic applications.