Interband Transitions in Gallium Sulfide Layered Single Crystals by Ellipsometry Measurements
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorscopusid | 23766993100 | |
| dc.authorscopusid | 35580905900 | |
| dc.authorscopusid | 8307543400 | |
| dc.authorwosid | Turan, Rasit/ABB-4627-2020 | |
| dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
| dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
| dc.authorwosid | Isik, Mehmet/KMY-5305-2024 | |
| dc.contributor.author | Isik, M. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.author | Turan, R. | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.date.accessioned | 2024-07-05T14:28:06Z | |
| dc.date.available | 2024-07-05T14:28:06Z | |
| dc.date.issued | 2013 | |
| dc.department | Atılım University | en_US |
| dc.department-temp | [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.; Turan, R.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey | en_US |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; | en_US |
| dc.description.abstract | Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. (C) 2012 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.citationcount | 10 | |
| dc.identifier.doi | 10.1016/j.physb.2012.09.051 | |
| dc.identifier.endpage | 45 | en_US |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.issn | 1873-2135 | |
| dc.identifier.scopus | 2-s2.0-84870051005 | |
| dc.identifier.startpage | 43 | en_US |
| dc.identifier.uri | https://doi.org/10.1016/j.physb.2012.09.051 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/346 | |
| dc.identifier.volume | 408 | en_US |
| dc.identifier.wos | WOS:000313349700009 | |
| dc.institutionauthor | Işık, Mehmet | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.scopus.citedbyCount | 11 | |
| dc.subject | Semiconductors | en_US |
| dc.subject | Ellipsometry | en_US |
| dc.subject | Pseudorefractive index | en_US |
| dc.title | Interband Transitions in Gallium Sulfide Layered Single Crystals by Ellipsometry Measurements | en_US |
| dc.type | Article | en_US |
| dc.wos.citedbyCount | 11 | |
| dspace.entity.type | Publication | |
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