Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorscopusid8307543400
dc.authorwosidTuran, Rasit/ABB-4627-2020
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, N. M.
dc.contributor.authorTuran, R.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:28:06Z
dc.date.available2024-07-05T14:28:06Z
dc.date.issued2013
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.; Turan, R.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;en_US
dc.description.abstractSpectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.identifier.citation10
dc.identifier.doi10.1016/j.physb.2012.09.051
dc.identifier.endpage45en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-84870051005
dc.identifier.startpage43en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2012.09.051
dc.identifier.urihttps://hdl.handle.net/20.500.14411/346
dc.identifier.volume408en_US
dc.identifier.wosWOS:000313349700009
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectEllipsometryen_US
dc.subjectPseudorefractive indexen_US
dc.titleInterband transitions in gallium sulfide layered single crystals by ellipsometry measurementsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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