Interband Transitions in Gallium Sulfide Layered Single Crystals by Ellipsometry Measurements

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Date

2013

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Volume Title

Publisher

Elsevier

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Green Open Access

No

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Abstract

Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. (C) 2012 Elsevier B.V. All rights reserved.

Description

Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;

Keywords

Semiconductors, Ellipsometry, Pseudorefractive index, Pseudorefractive index, Ellipsometry, Semiconductors

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Fields of Science

0103 physical sciences, 02 engineering and technology, 0210 nano-technology, 01 natural sciences

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WoS Q

Q2

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OpenCitations Citation Count
9

Source

Physica B: Condensed Matter

Volume

408

Issue

Start Page

43

End Page

45

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CrossRef : 5

Scopus : 12

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12

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12

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1

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