Interband Transitions in Gallium Sulfide Layered Single Crystals by Ellipsometry Measurements
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Date
2013
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Open Access Color
Green Open Access
No
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Publicly Funded
No
Abstract
Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. (C) 2012 Elsevier B.V. All rights reserved.
Description
Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;
Keywords
Semiconductors, Ellipsometry, Pseudorefractive index, Pseudorefractive index, Ellipsometry, Semiconductors
Turkish CoHE Thesis Center URL
Fields of Science
0103 physical sciences, 02 engineering and technology, 0210 nano-technology, 01 natural sciences
Citation
WoS Q
Q2
Scopus Q

OpenCitations Citation Count
9
Source
Physica B: Condensed Matter
Volume
408
Issue
Start Page
43
End Page
45
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Citations
CrossRef : 5
Scopus : 12
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Mendeley Readers : 20
SCOPUS™ Citations
12
checked on Jan 23, 2026
Web of Science™ Citations
12
checked on Jan 23, 2026
Page Views
1
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