Interband Transitions in Gallium Sulfide Layered Single Crystals by Ellipsometry Measurements

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2013

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Elsevier

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. (C) 2012 Elsevier B.V. All rights reserved.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;
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Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo

Keywords

Semiconductors, Ellipsometry, Pseudorefractive index

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408

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43

End Page

45

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https://doi.org/10.1016/j.physb.2012.09.051
 https://hdl.handle.net/20.500.14411/346

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