Enhancing the Optoelectronic Performance of As<sub>2</Sub>se<sub>3< Thin Films Via Ag Slabs Sandwiching

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Alharbi, Seham/0000-0002-0702-6866
dc.authorscopusid 6603962677
dc.authorscopusid 55735276400
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Alharbi, Seham/JFK-4290-2023
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Alharbi, Seham Reef
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:39:19Z
dc.date.available 2024-07-05T15:39:19Z
dc.date.issued 2020
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, Palestine; [Qasrawi, A. F.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkey; [Alharbi, Seham Reef] King Abdulaziz Univ, Fac Sci Al Faisaliah, Dept Phys, Jeddah, Saudi Arabia; [Alharbi, Seham Reef] Univ Jeddah, Dept Phys, Fac Sci, Jeddah, Saudi Arabia en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; Alharbi, Seham/0000-0002-0702-6866 en_US
dc.description.abstract In this work, the effects of insertion of Ag slabs of thicknesses of 50, 100 and 200 nm between layers of arsenic selenide are reported. The glassy structured As2Se3 is characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, ultraviolet-visible light spectrophotometry and impedance spectroscopy techniques. While the two stacked layers of As2Se3 exhibited high absorption and energy band gap values that nominate them for optoelectronic applications, the Ag slabs enhanced the light absorbability by 3.98, 5.77, 6.13 times and shrunk the energy band gap by 1.16 %, 7.40 % and 13.8 % for Ag slabs of thicknesses of 50, 100 and 200 nm, respectively. In addition, even though the As2Se3/As2Se3 layers exhibited negative capacitance effect in the frequency domain of 0.01-1.80 GHz, the insertion of Ag slabs removed the negative capacitance effect and forced the capacitance spectra to exhibit resonance at critical frequency of value of 0.23 GHz. The modeling of the capacitance spectra have shown that the geometrical capacitance is increased by one order of magnitude upon Ag slabs insertion. The dynamic capacitance is limited by electrons (holes) plasmonic interaction at the interface between the As2Se3/Ag/As2Se3 layers. Furthermore, the capacitance- voltage characteristics of the As2Se3/Ag/As2Se3 films confirmed the suitability of the devices to exhibit MOS device features. The characteristics of the stacked layers of As2Se3 indicate their multi-functionality as an optical absorbers/receivers and as microwave cavities. en_US
dc.description.sponsorship Deanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah en_US
dc.description.sponsorship This article was funded by the Deanship of Scientific Research (DSR) at King Abdulaziz University, Jeddah. The authors, therefore, acknowledge with thanks DSR for technical and financial support. en_US
dc.identifier.citationcount 7
dc.identifier.doi 10.1016/j.ijleo.2020.165228
dc.identifier.issn 0030-4026
dc.identifier.issn 1618-1336
dc.identifier.scopus 2-s2.0-85087954897
dc.identifier.uri https://doi.org/10.1016/j.ijleo.2020.165228
dc.identifier.uri https://hdl.handle.net/20.500.14411/3212
dc.identifier.volume 219 en_US
dc.identifier.wos WOS:000598309000013
dc.identifier.wosquality Q2
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Elsevier Gmbh en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 7
dc.subject As2Se3/Ag/As2Se3 en_US
dc.subject Negative capacitance en_US
dc.subject High absorbance en_US
dc.subject Electronic switch en_US
dc.subject Microwave cavity en_US
dc.title Enhancing the Optoelectronic Performance of As<sub>2</Sub>se<sub>3< Thin Films Via Ag Slabs Sandwiching en_US
dc.type Article en_US
dc.wos.citedbyCount 7
dspace.entity.type Publication
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