Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
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Doçent Doktor
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atef.qasrawi@atilim.edu.tr
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Department of Electrical & Electronics Engineering
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Former Staff
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Scholarly Output

226

Articles

222

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677/0

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WoS Citation Count

1894

Scopus Citation Count

1915

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WoS Citations per Publication

8.38

Scopus Citations per Publication

8.47

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17

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0

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Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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Start date: 2010Subject: Optical materials

Scholarly Output Search Results

Now showing 1 - 10 of 20
  • Thumbnail Image
    Article
    Citation - WoS: 16
    Citation - Scopus: 17
    Dielectric Dispersion in Ga2s3< Thin Films
    (Springer, 2017) Alharbi, S. R.; Qasrawi, A. F.
    In this work, the structural, compositional, optical, and dielectric properties of Ga2S3 thin films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray analysis, and ultraviolet-visible light spectrophotometry. The Ga2S3 thin films which exhibited amorphous nature in its as grown form are observed to be generally composed of 40.7 % Ga and 59.3 % S atomic content. The direct allowed transitions optical energy bandgap is found to be 2.96 eV. On the other hand, the modeling of the dielectric spectra in the frequency range of 270-1,000 THz, using the modified Drude-Lorentz model for electron-plasmon interactions revealed the electrons scattering time as 1.8 (fs), the electron bounded plasma frequency as similar to 0.76-0.94 (GHz) and the reduced resonant frequency as 2.20-4.60 x10(15) (Hz) in the range of 270-753 THz. The corresponding drift mobility of electrons to the terahertz oscillating incident electric field is found to be 7.91 (cm (2)/Vs). The values are promising as they nominate the Ga2S3 thin films as effective candidates in thin-film transistor and gas sensing technologies.
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    Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Plasmon-Electron Dynamics at the Au/Inse and Y/Inse Interfaces Designed as Dual Gigahertz-Terahertz Filters
    (Elsevier Gmbh, Urban & Fischer verlag, 2017) Alharbi, S. R.; Qasrawi, A. F.
    In this work, the X-ray diffraction, the Scanning electron microscopy, the energy dispersive X-ray, the Raman, The UV-vis light and the impedance spectral techniques are employed to explore the structural, vibrational, optical and electrical properties of the Au/InSe and Y/InSe thin film interfaces. It was shown that with its amorphous nature of crystallization, the InSe thin films exhibited n-type conductivity due to the 3% excess selenium. For this form of InSe, the only active Raman spectral line is 121 (cm(-1)). In addition to the design of the energy band diagram, the analysis the dielectric spectra and the optical conductivities were possible in the frequency range of 270-1000 THz. The modeling of the optical conductivities of the Au, Y, Au/InSe and Y/InSe with the help of Lorentz approach for optical conduction, assured that the conduction is dominated by the resonant plasmon-electron interactions at the metals and metals/semiconductors interfaces. It also allowed tabulating the necessary parameters for possible applications in terahertz technology: These parameters are the electron effective masses, the free electron densities, the electron bounded plasmon frequencies, the electron scattering times, the reduced resonant frequencies and the drift mobilities. On the other hand, the impedance spectral analysis of the Y/InSe/Au interfaces in the frequency range of 0.01-1.80 GHz, revealed negative capacitance effect associated with band filter features that exhibit maximum transition line at 1.17 GHz. This value nominates the interface as a member of filter classes in the gigahertz technology. (C) 2017 Elsevier GmbH. All rights reserved.
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    Article
    Citation - WoS: 9
    Citation - Scopus: 9
    Effect of Ytterbium, Gold and Aluminum Transparent Metallic Substrates on the Performance of the Ga2s3< Thin Film Devices
    (Elsevier Science Bv, 2017) Alharbi, S. R.; Qasrawi, A. F.
    In the current work, the structural, optical, dielectric and electrical properties of the Ga2S3 thin films which are deposited onto transparent thin Al, Yb and Au metal substrates are characterized by means of transmittance electron microscopy, X-ray diffraction, ultraviolet visible light spectroscopy and impedance spectroscopy techniques. The effects of the metallic substrates on the crystalline nature, energy band gap and dielectric spectra are also investigated. The modeling of the dielectric spectra allowed determining the effect of the Al, Yb and Au thin layers on the electron scattering time, the plasmon frequency, free electron density and drift mobility. In addition, a Yb/Ga2S3/Au Schottky barrier and All Ga2S3/Au back to back Schottky barrier devices (metal-semiconductor-metal (MSM) device) are fabricated and characterized by means of capacitance-voltage characteristics and capacitance and conductance spectra in the frequency range of 10-1800 MHz. While the Schottky barrier device displayed three distinct positions of resonance-antiresonance phenomena, the MSM device displayed one peak with narrow bandwidth of 10 MHz. The MSM devices exhibited an inversion, depletion and accumulation modes within a voltage range of 0.25 V width at 250 MHz. The study indicates the applicability of these device as smart capacitive switches, as Plasmon devices and as wavetraps. (C) 2017 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 9
    Citation - Scopus: 9
    Transient and Steady State Photoelectronic Analysis in Tlinse2 Crystals
    (Pergamon-elsevier Science Ltd, 2011) Qasrawi, A. F.; Gasanly, N. M.
    The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. The change in the recombination mechanism is attributed to the exchange of roles between the linear recombination at the surface and trapping centres in the crystal, which become dominant as temperature decreases. The transient photoconductivity measurement allowed the determination of the capture coefficient of traps for holes as 3.11 x 10(-22) cm(-2). (C) 2011 Elsevier Ltd. All rights reserved.
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    Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Design of the Zns/Ge pn Interfaces as Plasmonic, Photovoltaic and Microwave Band Stop Filters
    (Elsevier Science Bv, 2017) Alharbi, S. R.; Qasrawi, A. F.
    In the current work, we report and discuss the features of the design of a ZnS (300 nm)/Ge (300 nm)/GaSe (300 nm) thin film device. The device is characterized by the X-ray diffraction, electron microscopy, energy dispersive X-ray spectroscopy (EDS), optical spectroscopy, microwave power spectroscopy and light power dependent photoconductivity. While the X-ray diffraction technique revealed a polycrystalline ZnS coated with two amorphous layers of Ge and GaSe, the hot probe tests revealed the formation of pn interface. The optical spectra which were employed to reveal the conduction and valence band offsets at the ZnS/Ge and Ge/GaSe interface indicated information about the dielectric dispersion at the interface. The dielectric spectra of the ZnS/Ge/GaSe heterojunction which was modeled assuming the domination of surface plasmon interactions through the films revealed a pronounced increase in the drift mobility of free carriers in the three layers compared to the single and double layers. In the scope of the fitting parameters, a wave trap that exhibit filtering properties at notch frequency of 2.30 GHz was designed and tested. The ac signals power spectrum absorption reached similar to 99%. In addition, the photocurrent analysis on the ZnS/Ge/GaSe interface has shown it is suitability for photovoltaic and photosensing applications. (C) 2017 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license
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    Article
    Citation - WoS: 11
    Citation - Scopus: 11
    Optical and Electrical Performance of Yb/Inse Interface
    (Elsevier Sci Ltd, 2016) Alharbi, S. R.; Qasrawi, A. F.
    In this study a 300 nm ytterbium transparent thin film is used as substrate to a 300 nm thick InSe thin film. The optical transmittance, reflectance and absorbance of the glass/InSe and Yb/InSe films are measured and analyzed. The optical data allowed determining the effects of the Yb layer on the energy band gap, on the dielectric and on optical conductivity spectra. The band gap of the InSe films shrunk from 2.38/139 to 1.90/1.12 eV upon Yb layer interfacing leading to a band offset of 0.48/0.27 eV. On the other hand, the modeling of the optical conductivity in accordance with the Lorentz theory revealed a free carrier scattering time, carrier density and mobility of 0.225 (fs), 3.0 x 10(19)(cm(-3)) and 2.53 cm(2)/Vs for the Yb/InSe interface, respectively. As these values seem to be promising for employing the Yb/InSe interface in thin film transistor technology, the current voltage characteristics of Yb/InSe/C Schottky diode were recorded and analyzed. The electrical analysis revealed the removal of the tunneling channels by using Yb in place of Al. In addition, the "on/off' current ratios, the Schottky barrier height and the switching voltage of the Yb/InSe/C device are found to be 18.8, 0.76/0.60 eV and 0.53 V, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
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    Article
    Citation - WoS: 9
    Citation - Scopus: 8
    Dielectric dispersion in InSe/CdS bilayers
    (Elsevier Science Bv, 2018) Qasrawi, A. F.; Shehada, Sufyan R.
    In the current study, the effect of the amorphous InSe thin film substrate on the structural, optical and dielectric properties of CdS are investigated. The structural analysis of the bilayers indicated a strained growth of CdS onto InSe leading to decrease in grain size and increase in the dislocation density. The optical measurements have shown that the InSe/CdS exhibits two direct allowed transitions energy band gap values of 2.04 and 1.38 eV, in the high and low absorption regions, respectively. On the other hand, the detailed analysis of the dielectric spectra for the InSe, CdS and InSe/CdS layers has shown that the presence of the InSe substrate significantly improves the optical conduction parameters. Particularly, the Drude-Lorentz modeling for these dielectric systems revealed a drift mobility value of 329 cm(2)/V for the InSe/CdS bilayer. The deposition of the CdS onto InSe is also observed to shift the plasmon frequency of CdS from 2.49 to 0.77 GHz. The general features of the InSe/ CdS as plasmon cavities are promising as it shows its usability for production of optoelectronic devices that exhibit high performance at very high frequencies.
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    Article
    Citation - WoS: 5
    Citation - Scopus: 4
    Properties of Se/Inse Thin-Film Interface
    (Springer, 2016) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Kayed, T. S.; Elsayed, Khaled A.; Kayed, Tarek Said; Qasrawı, Atef Fayez Hasan; Kayed, Tarek Said; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr. The structural, optical, and electrical properties of the films and Se/InSe interface were investigated by means of x-ray diffraction (XRD) analysis, ultraviolet-visible spectroscopy, and current-voltage (I-V) characteristics. XRD analysis indicated that the prepared InSe films were amorphous while the Se films were polycrystalline having hexagonal structure with unit cell parameters of a = 4.3544 and c = 4.9494 . Spectral reflectance and transmittance analysis showed that both Se and InSe films exhibited indirect allowed transitions with energy bandgaps of 1.92 eV and 1.34 eV, respectively. The Se/InSe interface exhibited two energy bandgaps of 0.98 eV and 1.73 eV above and below 2.2 eV, respectively. Dielectric constant values were also calculated from reflectance spectra for the three layers in the frequency range of 500 THz to 272 THz. The dielectric constant exhibited a promising feature suggesting use of the Se/InSe interface as an optical resonator. Moreover, the Au/Se/InSe/Ag heterojunction showed some rectifying properties that could be used in standard optoelectronic devices. The ideality factor and height of the energy barrier to charge carrier motion in this device were found to be 1.72 and 0.66 eV, respectively.
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    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Mgo/Gase0.5< Heterojunction as Photodiodes and Microwave Resonators
    (Ieee-inst Electrical Electronics Engineers inc, 2016) Qasrawi, Atef F.; Khanfar, Hazem K.; Gasanly, N. M.
    In this paper, a multifunctional operating optoelectronic device that suits visible light (VLC) and microwave communication systems is designed and characterized. The device which is composed of p-type MgO and n-type GaSe0.5S0.5 heterojunction is characterized by means of optical absorbance in the incident light energy (E) region of 3.5-1.1 eV, dark and illuminated current (I)-voltage (V) characteristics, and impedance spectra in the frequency range of 1M-1.8 GHz. Four types of lasers which generate light of wavelengths 406, 632, 850, and 1550 nm are used to excite the active region of the device. The device was also illuminated by non-monochromatic light. The incident light power was varied in the range of 1.12-10.17 mu W. It was observed that the heterojunction exhibits an optical energy bandgap (E-g) of 1.85 eV. For laser excitation with E > Eg, the photosensitivity (S) exceeds 67 while it is less than unity for excitations with E < Eg. These behaviors are assigned to the intrinsic and extrinsic nature of absorption, respectively. In addition, S increases as a result of energy barrier height lowering with increasing light power. On the other hand, when the device was excited with ac signal, the capacitance and impedance of the device displayed a resonance-antiresonance property associated with negative differential resistance and very high signal quality factor (10(3)) above 1.37 GHz. The bandwidth of the two resonance-antiresonance peaks is 319 and 12.6 MHz at 1.475 and 1.649 GHz, respectively. These results are attractive for using the heterojunction in VLC and microwave communication technologies.
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    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Characterization of the Nanosandwiched Ga2s3< Interfaces as Microwave Filters and Thermally Controlled Electric Switches
    (Elsevier Gmbh, 2018) Alharbi, S. R.; Nazzal, Eman O.; Qasrawi, A. F.
    In this work, an indium layer of 50 nm thicknesses is sandwiched between two 500 nm thick Ga2S3 layers. The effect of indium nansandwiching on the composition, structure, morphology, light absorbability, capacitance and reactance spectra, and temperature dependent electrical conductivity of the Ga2S3 films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray spectroscopy, Raman spectroscopy, visible light spectrophotometry, impedance spectroscopy and current voltage characteristics. While the nansandwiched films are observed to exhibit an amorphous nature of structure with indium content of Owing to the nucleation mechanisms that take place during the film growth, the accumulation of some unit cells in groups to form grains should be a significant reason for the existence of many different sizes of grains in the nanosand-wiched films (Alharbi and Qasrawi, 2016). 0, the Raman spectra displayed three vibrational modes at 127.7,145.0 and 274.3 cm(-1). It was also observed that the indium insertion in the structure of the Ga2S3 shrinks the energy band gap by 0.18 eV. The nanosandwiched films are observed to exhibit a semiconductor metal (SM) transition at 310 K. The SM transition is associated with thermal hysteresis that exhibited a maximum value of 16% at 352 K. This behavior of the nanosandwiched films nominate it for use as thermally controlled electric switches. In addition, the impedance spectral analysis in the range of 10-1800 MHz has shown a capacitance tunability of more than 70%. The measurements of the wave trapping property displayed a bandpass/reject filter characteristics above 1.0 GHz which allow using the Ga2S3/In/Ga2S3 thin films as microwave resonator. (C) 2017 Elsevier GmbH. All rights reserved.