Optical and electrical performance of Yb/InSe interface

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Date

2016

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Elsevier Sci Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

In this study a 300 nm ytterbium transparent thin film is used as substrate to a 300 nm thick InSe thin film. The optical transmittance, reflectance and absorbance of the glass/InSe and Yb/InSe films are measured and analyzed. The optical data allowed determining the effects of the Yb layer on the energy band gap, on the dielectric and on optical conductivity spectra. The band gap of the InSe films shrunk from 2.38/139 to 1.90/1.12 eV upon Yb layer interfacing leading to a band offset of 0.48/0.27 eV. On the other hand, the modeling of the optical conductivity in accordance with the Lorentz theory revealed a free carrier scattering time, carrier density and mobility of 0.225 (fs), 3.0 x 10(19)(cm(-3)) and 2.53 cm(2)/Vs for the Yb/InSe interface, respectively. As these values seem to be promising for employing the Yb/InSe interface in thin film transistor technology, the current voltage characteristics of Yb/InSe/C Schottky diode were recorded and analyzed. The electrical analysis revealed the removal of the tunneling channels by using Yb in place of Al. In addition, the "on/off' current ratios, the Schottky barrier height and the switching voltage of the Yb/InSe/C device are found to be 18.8, 0.76/0.60 eV and 0.53 V, respectively. (C) 2015 Elsevier Ltd. All rights reserved.

Description

Qasrawi, Atef Fayez/0000-0001-8193-6975;

Keywords

Optical materials, Coating, Optical desorption spectroscopy, Dielectric properties

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Citation

11

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Q2

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Q1

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Volume

43

Issue

Start Page

60

End Page

64

URI

https://doi.org/10.1016/j.mssp.2015.11.022
 https://hdl.handle.net/20.500.14411/475

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