WoS

Permanent URI for this collectionhttps://hdl.handle.net/20.500.14411/18

Browse

Search Results

Now showing 1 - 10 of 21

Reflections of Memory Boom on the Architectural Researches in Turkey
(Iop Publishing Ltd, 2020-12-10) Cihangiroglu, Melike Selcan
Memory is a notion studied by many different disciplines with its various points of views. Researchers, who examine memory and its sub-categories, discuss this notion through interactions of people within their individual; societal; cultural; and urban contexts. It is possible to observe a considerable increase of researches on the phenomenon of memory in the last two decades. These research increase is labelled in the literature as 'memory-boom'. The term "memory-boom" could be explained as the importance and attention given to the notion of memory in society and the academic world. An example of this 'memory-boom' can be seen in the increasing number of researches after the World War II and then The Holocaust. A similar rise was experienced after the 9/11 World Trade Centre attack. As a result of these incidents, which had a worldwide impact on masses, reasons behind memory-boom started to emerge in some researches. In this study, 'memory-boom' is discussed within the national context of Turkey. Notion of memory has been studied in many researches in Turkey, as in the literature of elsewhere. This study focuses on the rise of academic works in Turkey that examine relations between architectural buildings and memory within the field of architecture, as opposed to researches focusing solely on the concept of memory. The purposes of the study could be explained as twofold: 1) to understand reasons behind the increase of memory researches in Turkey and triggers or reasons that may be affecting these works, 2) to understand reasons of the memory-boom related to architecture and architectural buildings in Turkey. In this context, this study is constructed as a preliminary work, which has limited research universe that encompass academic dissertations in architecture and interior design disciplines, written between years of 2000-2020 in Turkey. Thesis, which are archived at the "Council of Higher Education National Thesis Center" database, are examined within the scope of this study, to be able to demonstrate the relations between architecture and memory-boom. The study has a qualitative, interpretive conceptual framework and it relies on critical readings of the existing literature as a method. It is aimed to understand notable similarities and/or differences between triggering reasons of memory-boom in Turkey and related architectural studies. The study intends to contribute to the literature by drawing attention to the notion of "memory-boom" in national literature and to expand its place in academic works and researches.
Developments in Technology-Based Courses Contents of Interior Architecture Departments in Turkey
(Iop Publishing Ltd, 2020-12-01) Aykac, Gokce Nur
The introduction of information technologies in space design disciplines begins with the use of the Computer Aided Design concept in those disciplines. Since the first example of CAD tool which was launched in 1963, the ability to design using computers has been a method adopted by architecture and space design disciplines and transferred to the educational context. There were changes and transformations in this method due to the needs created by the developing building technologies. The CAD technology, has been adopted to the space design education in order to support the courses. The CAD which was created for challenging the difficulties in the practicing area and speeding up the process, also takes place among the traditional methods of space design in the Interior Architecture discipline. The possibilities provided by those digitally created spatial mediums, have led to a rotational improvement in both education and practice. In addition, the reflections of technological developments in the social context in last decade on many areas of life have led to the necessity of reorganizing the educational contents. Academic studies conducted in recent years, are designed to include the last technological developments in today's educational contents and to reflect students' interests and commitment to these technologies in direct proportion. Bearing this in mind, the objective of this study is to read out the reflection of the developments mentioned above on the Interior Architecture discipline in Turkey by monitoring the developments in the context of the need of updating the educational contents. In order to meet the social developments and today's skills, space design education must follow the technological context in parallel. Based on these considerations, the studies of Turkey which were examined in this research have been conducted before could be explained as inadequate. In this context, to examine the curriculum of the Interior Architecture departments of Turkey and to monitor the updates mentioned before constitute the main focus of the study. CAD-based courses in the curriculum of the Interior Architecture departments were determined and the contents were examined. These analyses were achieved in the context of the methods, techniques and tools used in the courses, and after, the situation of the information based courses were determined. It was concluded that these courses were transformed in direct proportion in line with the increasing needs in the educational context with the developing technology and updates should continue in the context of meeting today's skills.
Citation - WoS: 4
Citation - Scopus: 4
A Material Perspective on Consequence of Deformation Heating During Stamping of Dp Steels
(Iop Publishing Ltd, 2017-09) Simsir, C.; Cetin, B.; Efe, M.; Davut, K.; Bayramin, B.
Recent studies showed that, during stamping of high strength steels at industrially relevant production rates, local temperature in the blank may rise up to 200 degrees C - 300 degrees C due to deformation heating. Moreover, die temperature may also rise up to 100 degrees C - 150 degrees C for progressive stamping dies. Based on the common assumption that the blank softens as the temperature increases, thermal softening creates a margin in Forming Limit Diagram (FLD) and therefore the FLD determined at room temperature can safely be used for those cases. In this article, the validity of this assumption on DP590 steel is questioned by high temperature tensile tests (RT - 300 degrees C) at various strain rates (10(-3) s(-1) - 1 s(-1)). The results indicated a decrease both in uniform and total elongation in 200 degrees C - 300 degrees C range together with several other symptoms of Dynamic Strain Aging (DSA) at all strain rates. Concurrent with the DSA, the simulated FLD confirms the lower formability at high temperature and strain rates. Thus, it is concluded FLD determined at RT may not be valid for the investigated steels.
Citation - WoS: 12
Citation - Scopus: 13
Fcnc Transitions of Λb,c< To Nucleon in Sm
(Iop Publishing Ltd, 2010-10-11) Azizi, K.; Bayar, M.; Sarac, Y.; Sundu, H.
We provide a comprehensive study of semileptonic flavor-changing neutral current transitions for Lambda(b) -> nl(+) l(-) and Lambda(c) -> pl(+) l(-) in the context of light cone QCD sum rules. Using the most general form of the interpolating current for Lambda(b),(c), as well as nucleon distribution amplitudes, we calculate all 12 form factors entering the calculations in full theory. We obtain the order of heavy quark effective theory violation and argue that the Lambda(b) -> nl(+) l(-) case can be studied at LHC, but the other one has a very small branching ratio.
Citation - WoS: 37
Citation - Scopus: 43
Geometry and Surface Damage in Micro Electrical Discharge Machining of Micro-Holes
(Iop Publishing Ltd, 2009-09-24) Ekmekci, Buelent; Sayar, Atakan; Opoz, Tahsin Tecelli; Erden, Abdulkadir
Geometry and subsurface damage of blind micro-holes produced by micro electrical discharge machining (micro-EDM) is investigated experimentally to explore the relational dependence with respect to pulse energy. For this purpose, micro-holes are machined with various pulse energies on plastic mold steel samples using a tungsten carbide tool electrode and a hydrocarbon-based dielectric liquid. Variations in the micro-hole geometry, micro-hole depth and over-cut in micro-hole diameter are measured. Then, unconventional etching agents are applied on the cross sections to examine micro structural alterations within the substrate. It is observed that the heat-damaged segment is composed of three distinctive layers, which have relatively high thicknesses and vary noticeably with respect to the drilling depth. Crack formation is identified on some sections of the micro-holes even by utilizing low pulse energies during machining. It is concluded that the cracking mechanism is different from cracks encountered on the surfaces when machining is performed by using the conventional EDM process. Moreover, an electrically conductive bridge between work material and debris particles is possible at the end tip during machining which leads to electric discharges between the piled segments of debris particles and the tool electrode during discharging.
Citation - WoS: 7
Citation - Scopus: 10
Analysis of the Hall Effect in Tlgate2 Single Crystals
(Iop Publishing Ltd, 2009-05-15) Qasrawi, A. F.; Gasanly, N. M.
The electrical resistivity and Hall coefficient of p-type TlGaTe2 crystals were measured in the temperature range of 110-320 K. The electrical resistivity, charge carrier density and Hall mobility data for the crystals have been analyzed by means of existing theories and models to determine the extrinsic energy levels, the carrier effective mass, the donor and acceptor concentrations and the dominant scattering mechanism in the crystal as well. The analysis of the temperature-dependent electrical resistivity recorded parallel and perpendicular to the crystal's axis ( c-axis) reflected the existence of energy levels located at 0.26 and at 0.20 eV, respectively. The difference of these two energy levels is due to crystal anisotropy. The energy level at 0.26 eV was found to represent an acceptor level, as confirmed from Hall data analysis. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis revealed the carrier effective mass and the acceptor and donor concentrations as 0.73m(0), 4.10 x 10(17) cm(-3) and 1.20 x 10(17) cm(-3), respectively. The Hall mobility of TlGaTe2 is found to be limited by the scattering of hole-acoustic phonon interactions. The calculated theoretical mobility fits to the experimental one under the condition that the acoustic deformation potential is 11.0 eV, which is the energy position of the top of valence band maximum that is formed by the Te 5s states.
Citation - WoS: 11
Citation - Scopus: 11
Dispersive Optical Constants and Temperature-Dependent Band Gap of Cadmium-Doped Indium Selenide Thin Films
(Iop Publishing Ltd, 2005-06-16) Qasrawi, AF; Department of Electrical & Electronics Engineering
Polycrystalline cadmium-doped indium selenide thin films were obtained by the thermal co-evaporation of alpha-In2Se3 crystals and Cd onto glass substrates kept at a temperature of 200 degrees C. The temperature dependence of the optical band gap in the temperature region of 300-450 K and the room temperature refractive index, n(lambda), of these films have been investigated. The absorption edge shifts to lower energy as temperature increases. The fundamental absorption edge corresponds to a direct energy gap that exhibits a temperature coefficient of -6.14 x 10(-4) eV K-1. The room temperature n(lambda) which was calculated from the transmittance data allowed the identification of the oscillator strength and energy, static and lattice dielectric constants and static refractive index as 20.06 and 3.07 eV, 7.43 and 10.52 and 2.74, respectively.
Citation - WoS: 26
Citation - Scopus: 26
Temperature Effect on Dark Electrical Conductivity, Hall Coefficient, Space Charge Limited Current and Photoconductivity of Tlgas2 Single Crystals
(Iop Publishing Ltd, 2005-03-15) Qasrawi, AF; Gasanly, NM
The dark electrical conductivity, Hall coefficient, space charge limited current, and illumination and temperature dependences of the photocurrent of TIGaS2 single crystals in the temperature regions of 100-350, 200-350, 200-290 and 100-350 K, respectively, have been measured and analysed. The Hall coefficient measurements revealed the extrinsic type of conduction with conductivity-type conversion from p- to n-type at a critical temperature of 315 K. The temperature dependence of the dark electrical conductivity exhibits activation behaviour with activation energies (0.360 +/- 0.005) eV and (0.240 +/- 0.005) eV at high and low temperatures, respectively. The space charge limited current analysis has shown that the energy level of (0.240 +/- 0.005) eV is a trapping state with trap density of (2.2-3.9) x 10(12) cm(-3). The data analysis of the photocurrent-temperature dependence has revealed two photoconductivity activation energies of (0.660 +/- 0.005) eV and (0.360 +/- 0.005) eV in the temperature regions of 290-350 K and 220-280 K, respectively. The illumination dependence of photoconductivity is found to exhibit linear and supralinear recombination mechanisms above and below 290 K, respectively.
Citation - WoS: 14
Citation - Scopus: 14
Light Illumination Effect on the Electrical and Photovoltaic Properties of In6s7< Crystals
(Iop Publishing Ltd, 2006-04-27) Qasrawi, AF; Gasanly, NM
The electrical and photoelectrical properties of In6S7 crystals have been investigated in the temperature regions of 170-300 K and 150-300 K, respectively. The dark electrical analysis revealed the intrinsic type of conduction. The energy band gap obtained from the temperature-dependent dark current is found to be 0.75 eV. It is observed that the photocurrent increases in the temperature range of 150 K up to T-m = 230 K and decreases at T > T-m. Two photoconductivity activation energies of 0.21 and 0.10 eV were determined for the temperature ranges below and above Tm, respectively. The photocurrent (I-ph)-illumination intensity (F) dependence follows the law I-ph alpha F-gamma. The value of. decreases when the temperature is raised to T-m, then it starts increasing. The change in the value. with temperature is attributed to the exchange in role between the recombination and trapping centres in the crystal. The crystals are found to exhibit photovoltaic properties. The photovoltage is recorded as a function of illumination intensity at room temperature. The maximum open-circuit voltage and short-circuit photocurrent density, which are related to an illumination intensity equivalent to one sun, are 0.12 V and 0.38 mA cm(-2), respectively.
Citation - WoS: 11
Citation - Scopus: 13
Fabrication and Characterization of To/Gase Au) Schottky Diodes
(Iop Publishing Ltd, 2006-05-03) Qasrawi, AF; Department of Electrical & Electronics Engineering
The optical properties of amorphous GaSe thin films deposited onto tin oxide (TO) coated glass substrates are presented for the purpose of using this material for the fabrication of metal-semiconductor devices. Specifically, the room temperature direct allowed and forbidden transition energy band gaps of glass/TO and glass/TO/GaSe films are estimated and found to exhibit values of 3.95 and 1.95 eV, respectively. The temperature dependence of the energy band gap of the glass/TO/GaSe is also studied in the temperature range of 295 - 450 K by means of optical transmittance and reflectance spectra. This study allowed the identification of the rate of change of the band gap with temperature as -5.0 x 10(-4) eV K-1 and the 0 K energy band gap as 2.1 eV. The above reported optical parameters of the glass/TO/GaSe structure seem to be suitable for semiconductor device production such as solar cell converters, metal - insulator - semiconductor (MIS), metal-oxide-semiconductor (MOS), MOSFET, etc devices. As an application, we have used the glass/TO/GaSe substrate for fabricating Schottky diodes using Ag and Au point contacts. The diodes are characterized by measuring the current (I) - voltage (V) characteristics at room temperature. The I - V curves exhibit rectifying properties. The I-V data analysis in the Schottky region (below 1.0 V) revealed barrier heights of 0.60 and 0.73 eV for Ag and Au point contacts, respectively.

WoS

Browse

Filters

Settings

Sort By

Results per page

Search Results