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Permanent URI for this collectionhttps://hdl.handle.net/20.500.14411/18

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Now showing 1 - 10 of 91

Citation - WoS: 7
Citation - Scopus: 7
Characterization of Bi12sio20< Single Crystal: Understanding Structural and Thermal Properties
(Springer Heidelberg, 2024-09-17) Altuntas, G.; Isik, M.; Gasanly, N. M.
This study presents a thorough examination of the structural and thermal characteristics of Bi12SiO20 crystal. X-ray diffraction (XRD) analysis was employed to investigate the crystallographic structure, while scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were utilized to ascertain morphological features and elemental composition, respectively. The XRD spectrum exhibited numerous peaks corresponding to the cubic crystalline structure. Thermal behavior was investigated through thermal gravimetric analysis (TGA), differential thermal analysis (DTA) and differential scanning calorimetry (DSC). Within the crystal, negligible weight loss was observed up to 750 degrees C, followed by weight loss processes occurring in the temperature ranges of 750-919 degrees C and above 919 degrees C. The 2% weight loss in the range of 750-919 degrees C was associated with the decomposition process, and the activation energy of this process was found to be 199 kJ/mol considering Coats-Redfern expression. A significant weight loss was observed in the region above 919 C-o and was associated with the decomposition of the Bi12SiO20 compound and/or the melting processes of the components of the Bi12SiO20 compound. Three endothermic peaks were observed in the DTA plot. Additionally, DSC measurements conducted under varied heating rates indicated endothermic crystallization process around 348 degrees C, with an activation energy of 522 kJ/mol determined through the Kissenger equation. These findings present valuable details regarding the crystal's structural configuration, morphological attributes, and decomposition/phase transitions, thereby illuminating its potential applications across various fields.
Citation - WoS: 14
Citation - Scopus: 18
Unveiling the Application Potential of Pbmo0.75w0.25< Crystal: Linear and Nonlinear Optical Properties Through Ellipsometry
(Elsevier, 2024-12) Isik, M.; Gasanly, N. M.
PbMo0.75W0.25O4 compound is formed by replacing one quarter of the Mo atoms in the PbMoO4 with W atoms and has significant potential for optoelectronic applications. Optical properties of PbMo0.75W0.25O4 single crystal have been systematically investigated using ellipsometry measurements in the spectral range of 2.4-5.4 eV. The linear optical parameters, including refractive index, extinction coefficient, and absorption coefficient, were extracted from the obtained ellipsometry data. By analyzing spectral dependence of these parameters, band gap energy, critical point energy, and single effective oscillator parameters were determined. The refractive index spectrum was analyzed in the below band gap energy region by considering Cauchy and Sellmeier models. Additionally, nonlinear optical values were calculated, providing a comprehensive understanding of the optical properties of the PbMo0.75W0.25O4 single crystal. This study not only contributes to the fundamental understanding of the crystal's optical properties but also has potential implications for applications in optoelectronic devices and photovoltaics.
Citation - WoS: 3
Citation - Scopus: 3
Optical Characterization of Nabi(moo4)2< Crystal by Spectroscopic Ellipsometry
(Springer Heidelberg, 2024-08-12) Guler, I.; Isik, M.; Gasanly, N. M.
The compound NaBi(MoO4)(2) has garnered significant interest in optoelectronic fields. This study employs spectroscopic ellipsometry to thoroughly examine the linear and nonlinear optical characteristics of NaBi(MoO4)(2) crystals, offering detailed insights into their optical behavior. Our investigation presents a precise method for discerning the crystal's spectral features, revealing the spectral variations of key optical parameters such as refractive index, extinction coefficient, dielectric function, and absorption coefficient within the 1.2-5.0 eV range. Through analysis, we determined optical attributes including bandgap energy, critical point energy, and single oscillator parameters. Additionally, we explored the nonlinear optical properties of NaBi(MoO4)(2), unveiling potential applications such as optoelectronic devices, frequency conversion, and optical sensors. This study enhances comprehension of optical properties of NaBi(MoO4)(2), underscoring its significance in future optical and electronic advancements.
Citation - Scopus: 2
Material and Device Properties of Si-Based Cu0.5ag0.5< Thin-Film Heterojunction Diode
(Springer, 2019-12-09) Gullu, H. H.; Isik, M.; Delice, S.; Parlak, M.; Gasanly, N. M.
Cu0.5Ag0.5InSe2 (CAIS) thin films were deposited on a glass substrate by sequential sputtering of Cu, Ag, and In2Se3-stacked film layers. Structural characterization showed that the deposited CAIS film satisfies nearly the stoichiometric form with uniform and homogeneous surface structure. The single-phase polycrystalline behavior without any secondary-phase formation was observed from the diffraction profile. The optical properties were investigated using temperature-dependent transmission measurements in the wavelength region of 600-1100 nm and in between 10 and 300 K. In the region of interest, the transmission spectra shifted towards the higher wavelengths as a result of an increase in the sample temperature. The analysis of the absorption data based on the transmission spectra resulted in absorption coefficient values of around 10(5) cm(-1) and the presence of direct allowed optical transition. From the Tauc plots, CAIS samples were found to have three distinct direct optical transitions depending on the possible splitting in the valence band. The obtained room temperature uppermost band gap energy value of 1.09 eV was found in the energy limit of ternary analogues (CuInSe2 and AgInSe2), and also in a good agreement with the previous works in the literature. The dependency of the band gap energy on the temperature was analyzed using fundamental relations. In addition, the electrical characteristics of the film layer were discussed in four-contact conductivity measurements, and room temperature conductivity was observed as 0.8 ohm(-1) cm(-1). Additionally, two activation energy values were found in the temperature-dependent conductivity profile. As a diode application, CAIS/Si heterojunction was fabricated and the main diode parameters were extracted at dark and room temperature conditions.
Citation - WoS: 42
Citation - Scopus: 47
Structural and Temperature-Dependent Optical Properties of Thermally Evaporated Cds Thin Films
(Elsevier Sci Ltd, 2019-04) Isik, M.; Gullu, H. H.; Delice, S.; Parlak, M.; Gasanly, N. M.
In this work, structural and temperature dependent optical properties of thermally evaporated CdS thin films were investigated. X-ray diffraction, energy dispersive spectroscopy and Raman spectroscopy experiments were carried out to characterize the thin films and obtain information about the crystal structure, atomic composition, surface morphology and vibrational modes. Temperature-dependent transmission measurements were performed in between 10 and 300 K and in the spectral range of 400-1050 nm. The analyses of transmittance spectra were accomplished by two different methods called as the absorption coefficient and the derivative spectrophotometry analyses. All evaluated band gap energy values at each studied temperature were in good agreement with each other depending on the applied analyses techniques. Room temperature gap energy values were found around 2.39 eV and 2.40 eV from absorption coefficient and derivative spectrophotometry analyses, respectively. Band gap energy depending on the sample temperature was studied under the light of two different models to investigate average phonon energy, electron phonon coupling parameter and the rate of change of band gap energy with temperature.
Citation - WoS: 14
Citation - Scopus: 15
Structural and Optical Properties of Ga2se3< Crystals by Spectroscopic Ellipsometry
(Springer, 2019-02-06) Guler, I.; Isik, M.; Gasanly, N. M.; Gasanova, L. G.; Babayeva, R. F.
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Citation - WoS: 5
Citation - Scopus: 5
Optical properties of (Ga2Se3)0.75 - (Ga2S3)0.25 single crystals by spectroscopic ellipsometry
(Elsevier Science Bv, 2019-05) Isik, M.; Gasanly, N. M.; Gasanova, L.
Structural and optical properties of 75 mol % Ga2Se3 - 25 mol % Ga2S3 system of single crystals were investigated by experimental techniques of x-ray diffraction (XRD), energy dispersive spectroscopy, Raman spectroscopy and ellipsometry. XRD pattern indicated that the studied compound has crystalline nature with cubic structure. Vibrational modes in the crystal were revealed using Raman spectroscopy experiments in the 90-450 cm(-1) frequency range and nine modes were observed in the spectrum. Ellipsometry measurements were utilized in the 1.2-6.2 eV range to get spectral dependencies of optical constants; complex dielectric function, refractive index and extinction coefficient. Under the light of fundamental expressions and models, refractive index and extinction coefficient spectra were analyzed to get various optical parameters of the single crystal.
Citation - WoS: 4
Citation - Scopus: 5
Analysis of Temperature-Dependent Transmittance Spectra of Zn0.5in0.5< (zis) Thin Films
(Springer, 2019-04-25) Isik, M.; Gullu, H. H.; Delice, S.; Gasanly, N. M.; Parlak, M.
Temperature-dependent transmission experiments of ZnInSe thin films deposited by thermal evaporation method were performed in the spectral range of 550-950nm and in temperature range of 10-300K. Transmission spectra shifted towards higher wavelengths (lower energies) with increasing temperature. Transmission data were analyzed using Tauc relation and derivative spectroscopy. Analysis with Tauc relation was resulted in three different energy levels for the room temperature band gap values of material as 1.594, 1.735 and 1.830eV. The spectrum of first wavelength derivative of transmittance exhibited two maxima positions at 1.632 and 1.814eV and one minima around 1.741eV. The determined energies from both methods were in good agreement with each other. The presence of three band gap energy levels were associated to valence band splitting due to crystal-field and spin-orbit splitting. Temperature dependence of the band gap energies were also analyzed using Varshni relation and gap energy value at absolute zero and the rate of change of gap energy with temperature were determined.
Citation - WoS: 22
Citation - Scopus: 27
Temperature Dependence of Band Gaps in Sputtered Snse Thin Films
(Pergamon-elsevier Science Ltd, 2019-08) Delice, S.; Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.; Bayrakli Surucu, O.
Temperature-dependent transmission experiments were performed for tin selenide (SnSe) thin films deposited by rf magnetron sputtering method in between 10 and 300 K and in the wavelength region of 400-1000 nm. Transmission spectra exhibited sharp decrease near the absorption edge around 900 nm. The transmittance spectra were analyzed using Tauc relation and first derivative spectroscopy techniques to get band gap energy of the SnSe thin films. Both of the applied methods resulted in existence of two band gaps with energies around 1.34 and 1.56 eV. The origin of these band gaps was investigated and it was assigned to the splitting of valence band into two bands due to spin-orbit interaction. Alteration of these band gap values due to varying sample temperature of the thin films were also explored in the study. It was seen that the gap energy values increased almost linearly with decreasing temperature as expected according to theoretical knowledge.
Citation - WoS: 10
Citation - Scopus: 11
Effect of Heating Rate on Thermoluminescence Characteristics of Y2o3< Nanoparticles
(Elsevier, 2019-08) Delice, S.; Isik, M.; Gasanly, N. M.
The present paper reports the results of heating rate dependencies of thermoluminescence (TL) peaks observed for Y2O3 nanoparticles in the below room temperature region. TL glow curve presented six peaks around 62.5, 91.3, 114.5, 162.7, 196.0 and 214.9 K for heating rate of 0.4 K/s. The increase of heating rate resulted in increase in peak maximum temperature and decrease in peak maximum intensity as expected according to theoretical information. Peak maximum temperature-heating rate dependencies of observed peaks were analysed according to exponential dependency relation. Curve fit and initial rise methods were applied on thermally cleaned individual peaks and activation energies of associated trap centers, frequency factors and order of kinetics were obtained from the analyses. Activation energy values of the revealed trapping centers found from both methods were in good agreement with each other. Moreover, lattice parameters, crystalline size and micro-strain of nanoparticles were investigated by means of x-ray diffraction measurements.

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